Philips PDTC114EE Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
PDTC114EE
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 Nov 26
1999 May 18
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
FEATURES
• Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in an SC-75 plastic
package. PNP complement: PDTA114EE.
MARKING
TYPE NUMBER MARKING CODE
PDTC114EE 09
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
handbook, halfpage
12
Top view
3
R1
1
Fig.1 Simplified outline (SC-75) and symbol.
1
MGA893 - 1
2
3
R2
2
MAM346
3
Fig.2 Equivalent inverter symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−10 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 7 10 13 kΩ
R2
------R1
C
c
thermal resistance from junction to ambient note 1 833 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE=30V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−400 µA
DC current gain IC= 5 mA; VCE=5V 30 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
input-off voltage IC= 100 µA; VCE=5V − 1.1 0.8 V
input-on voltage IC= 10 mA; VCE= 0.3 V 2.5 1.8 − V
resistor ratio 0.8 1 1.2
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−2.5 pF
1999 May 18 3
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