Philips PDTB114ET Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D088
PDTB114ET
PNP resistor-equipped transistor
Objective specification
Supersedes data of February 1995
1997 Sep 02
File under Discrete Semiconductors, SC04
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTB114ET
FEATURES
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
handbook, 4 columns
3
3
R1
1
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTD114ET.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
3 collector/output
QUICK REFERENCE DATA
Top view
Fig.1 Simplified outline (SOT23) and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter
symbol.
R2
2
21
MAM100
MARKING
TYPE
NUMBER
MARKING
CODE
PDTB114ET p09
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
I
P
h
O
CM
CEO
tot
FE
collector-emitter voltage open base −−−50 V
output current (DC) −−−500 mA
peak collector current −−−500 mA
total power dissipation T
≤ 25 °C −−250 mW
amb
DC current gain IC= −50 mA; VCE= −5V 56 −−
R1 input resistor 7 10 13 kΩ
R2
------- R1
resistor ratio 0.8 1 1.2
1997 Sep 02 2
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTB114ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
I
P
T
T
T
O
CM
CBO
CEO
EBO
I
tot
stg
j
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage
positive − +10 V
negative −−40 V
output current (DC) −−500 mA
peak collector current −−500 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 02 3
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