Philips PDTA144ET Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PDTA144ET
PNP resistor-equipped transistor
Product specification Supersedes data of 1998 May 19
1999 Apr 15
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA144ET
FEATURES
Built-in bias resistors R1 and R2 (typ. 47 k each)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space reduction in interface and driver circuits
Inverter circuit configurations without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC144ET.
PINNING
PIN DESCRIPTION
1 base/input 2 emitter/ground (+) 3 collector/output
handbook, 4 columns
Top view
Fig.1 Simplified outline (SOT23) and symbol.
1
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
3
3
R1
1
R2
2
21
MAM100
MARKING
TYPE
3
NUMBER
MARKING
(1)
CODE
PDTA144ET 07
Note
1. = p : Made in Hong Kong.= t : Made in Malaysia.
1999 Apr 15 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA144ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V V V
I I P T T T
O CM
CBO CEO EBO I
tot stg j amb
collector-base voltage open emitter −−50 V collector-emitter voltage open base −−50 V emitter-base voltage open collector −−10 V input voltage
positive 10 V
negative −−40 V output current (DC) −−100 mA peak collector current −−100 mA total power dissipation T
25 °C; note 1 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
collector cut-off current IE= 0; VCB= 50 V −−−100 nA collector cut-off current IB= 0; VCE= 30 V −−−1µA
I
= 0; VCE= 30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= 5V −−−90 µA DC current gain IC= 5 mA; VCE= 5V 80 −− collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−−150 mV input-off voltage IC= 100 µA; VCE= 5V −−1.2 0.8 V input-on voltage IC= 2 mA; VCE= 0.3 V 3 1.6 V
R1 input resistor 33 47 61 k R2
------- ­R1
C
c
resistor ratio 0.8 1 1.2 collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−3pF
1999 Apr 15 3
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