Philips PDTA143XE Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
PDTA143XE
PNP resistor-equipped transistor
Product specification
1999 Apr 20
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143XE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ and 10 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
handbook, halfpage
12
Top view
3
R1
1
R2
MAM345
3
2
Fig.1 Simplified outline SC-75 (SOT416) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in
an SC-75 (SOT416) plastic package.
1
3
MARKING
TYPE
NUMBER
MARKING
CODE
PDTA143XE 35
PINNING
MGA893 - 1
2
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
Fig.2 Equivalent inverter
symbol.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage
positive − 7V
negative −−20 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SC-75 (SOT416) standard mounting conditions.
1999 Apr 20 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA143XE
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SC-75 (SOT416) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 3.3 4.7 6.1 kΩ
R2
------- R1
C
c
thermal resistance from junction to ambient note 1 833 K/W
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
I
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= −5V −−−0.6 mA
DC current gain IC= −10 mA; VCE= −5V 50 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
input-off voltage IC= −100 µA; VCE= −5V −−−0.3 V
input-on voltage IC= −20 mA; VCE= −0.3 V −2.5 −−V
resistor ratio 1.7 2.1 2.6
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
1999 Apr 20 3
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