Philips PDTA143ES Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PDTA143ES
PNP resistor-equipped transistor
Product specification
Supersedes data of 1997 Jul 02
File under Discrete Semiconductors, SC04
1998 May 18
Philips Semiconductors Product specification
PNP resistor-equipped transistor
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
TO-92; SOT54 plastic package.
NPN complement: PDTC143ES.
PDTA143ES
handbook, halfpage
1
2
3
MAM338
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
1
2
R1
1
R2
2
3
PINNING
MGL136
3
PIN DESCRIPTION
1 base/input
2 collector/output
Fig.2 Equivalent inverter
symbol.
3 emitter/ground (+)
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
I
P
h
CEO
O
CM
tot
FE
collector-emitter voltage open base −−−50 V
output current (DC) −−−100 mA
peak collector current −−−100 mA
total power dissipation T
≤ 25 °C −−500 mW
amb
DC current gain VCE= −5 V; IC= −10 mA 30 −−
R1 input resistor 3.3 4.7 6.1 kΩ
R2
------- -
R1
resistor ratio 0.8 1 1.2
1998 May 18 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor
PDTA143ES
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage
positive − +10 V
negative −−30 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 150 °C
junction temperature − 150 °C
operating ambient temperature −65 150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
I
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= −5V −−−0.9 mA
DC current gain IC= −10 mA; VCE= −5V 30 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
input-off voltage IC= −100 µA; VCE= −5V −−1.1 −0.5 V
input-on voltage IC= −20 mA; VCE= −0.3 V −2.5 −1.9 − V
R1 input resistor 3.3 4.7 6.1 kΩ
R2
------- -
R1
C
c
resistor ratio 0.8 1 1.2
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
1998 May 18 3
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