Philips PDTA123JT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PDTA123JT
PNP resistor-equipped transistor
Product specification
1999 May 27
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA123JT
FEATURES
• Built-in bias resistors (typ 2.2 kΩ
and 47 kΩ respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
3 collector/output
handbook, 4 columns
Top view
Fig.1 Simplified outline (SOT23) and symbol.
1
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
3
3
R1
1
R2
2
21
MAM100
MARKING
TYPE
3
NUMBER
MARKING
(1)
CODE
PDTA123JT ∗23
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−10 V
input voltage
positive − +5 V
negative −−12 V
I
I
P
T
T
T
O
CM
tot
stg
j
amb
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT23 standard mounting conditions.
1999 May 27 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA123JT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 1.54 2.2 2.86 kΩ
R2
------- R1
C
c
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
I
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= −5V −−−180 µA
DC current gain IC= −10 mA; VCE= −5 V 100 −−
collector-emitter saturation voltage IC= −5 mA; IB= −0.25 mA −−−100 mV
input-off voltage IC= −100 µA; VCE= −5V −−−0.5 V
input-on voltage IC= −5 mA; VCE= −0.3 V −1.1 −0.75 − V
resistor ratio 17 21 26
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
1999 May 27 3
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