Philips PDTA114TU Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
PDTA114TU
PNP resistor-equipped transistor
Product specification
Supersedes data of 1998 May 15
1999 Apr 13
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA114TU
FEATURES
• Built-in bias resistor R1(typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
handbook, 4 columns
Top view
Fig.1 Simplified outline (SOT323) and symbol.
3
3
R1
1
2
21
MAM278
PNP resistor-equipped transistor in a
SOT323 plastic package.
NPN complement: PDTC114TU.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
PDTA114TU ∗23
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 13 2
Philips Semiconductors Product specification
PNP resistor-equipped transistor PDTA114TU
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 input resistor 7 10 13 kΩ
C
c
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
I
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −1 mA; VCE= −5 V 200 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
600
handbook, halfpage
h
FE
400
200
0
−1
−10
VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −40 °C.
−1 −10 −10
MBK784
(1)
(2)
(3)
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
−1
handbook, halfpage
V
CEsat
(V)
−1
−10
−2
−10
2
IC/IB= 10.
(1) T
(2) T
(3) T
−10
amb
amb
amb
−1
= 100 °C.
=25°C.
= −40 °C.
−1 −10 −10
MBK783
(1)
(2)
(3)
2
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 Apr 13 3
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