Philips PDTA114TU Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D102

PDTA114TU

PNP resistor-equipped transistor

Product specification			1999 Apr 13
Supersedes data of 1998 May 15

Philips Semiconductors	Product specification
PNP resistor-equipped transistor	PDTA114TU

FEATURES

∙Built-in bias resistor R1(typ. 10 kΩ)

∙Simplification of circuit design

∙Reduces number of components and board space.

APPLICATIONS

∙Especially suitable for space reduction in interface and driver circuits

∙Inverter circuit configurations without use of an external resistor.

DESCRIPTION

handbook, 4 columns		3

3

R1

1

2

		1		2
Top view				MAM278

Fig.1 Simplified outline (SOT323) and symbol.

PNP resistor-equipped transistor in a SOT323 plastic package.

NPN complement: PDTC114TU.

PINNING

PIN	DESCRIPTION
1	base/input
2	emitter/ground (+)
3	collector/output

LIMITING VALUES

1					3
	2
MGA893 - 1
Fig.2	Equivalent inverter
	symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

MARKING

TYPE	MARKING
NUMBER	CODE(1)
PDTA114TU	23

Note

1.= - : Made in Hong Kong.= t : Made in Malaysia.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−50	V
VCEO	collector-emitter voltage	open base	−	−50	V
VEBO	emitter-base voltage	open collector	−	−5	V
IO	output current (DC)		−	−100	mA
ICM	peak collector current		−	−100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 13

2

Philips Semiconductors			Product specification
PNP resistor-equipped transistor			PDTA114TU
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	625	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −50 V		−	−	−100	nA
ICEO	collector cut-off current	IB = 0; VCE = −30	V	−	−	−1	μA
		IB = 0; VCE = −30	V; Tj = 150 °C	−	−	−50	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V		−	−	−100	nA
hFE	DC current gain	IC = −1 mA; VCE = −5 V		200	−	−
VCEsat	collector-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA		−	−	−150	mV
R1	input resistor			7	10	13	kΩ
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz		−	−	3	pF

MBK784

600 handbook, halfpage

hFE

(1)

400

(2)

200

(3)

0
−10−1	−1	−10	−102

IC (mA)

VCE = −5 V.

(1)Tamb = 150 °C.

(2)Tamb = 25 °C.

(3)Tamb = −40 °C.

Fig.3 DC current gain as a function of collector current; typical values.

−1 MBK783 handbook, halfpage

VCEsat

(V)

	(1)
−10−1	(2)
	(3)

−10−2	−1	−10	−102
−10−1

IC (mA)

IC/IB = 10.

(1)Tamb = 100 °C.

(2)Tamb = 25 °C.

(3)Tamb = −40 °C.

Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values.

1999 Apr 13

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