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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA114TE
PNP resistor-equipped transistor
Preliminary specification |
1998 Jul 23 |
Supersedes data of 1997 Jul 14
File under Discrete Semiconductors, SC04
Philips Semiconductors |
Preliminary specification |
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PNP resistor-equipped transistor |
PDTA114TE |
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FEATURES
∙Built-in bias resistor R1 (typ. 10 kΩ)
∙Simplification of circuit design
∙Reduces number of components
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and board space. |
handbook, 4 columns |
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APPLICATIONS |
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R1 |
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∙ |
Especially suitable for space |
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Top view |
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MAM359 |
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reduction in interface and driver |
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circuit applications |
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∙Inverter circuit configurations without use of an external resistor.
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Fig.1 |
Simplified outline (SC-75) and symbol. |
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DESCRIPTION |
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PNP resistor-equipped transistor in |
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MARKING |
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an SC-75 plastic package. |
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NPN complement: PDTC114TE. |
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TYPE |
MARKING |
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PINNING |
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NUMBER |
CODE |
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PDTA114TE |
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11 |
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2 |
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PIN |
DESCRIPTION |
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MGA893 - 1 |
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base/input |
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Fig.2 Equivalent inverter |
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2 |
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emitter/ground (+) |
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symbol. |
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3 |
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collector/output |
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QUICK REFERENCE DATA |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
TYP. |
MAX. |
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UNIT |
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VCEO |
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collector-emitter voltage |
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open base |
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− |
− |
−50 |
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V |
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IO |
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output current (DC) |
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− |
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−100 |
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mA |
ICM |
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peak collector current |
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− |
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−100 |
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mA |
Ptot |
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total power dissipation |
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Tamb ≤ 25 °C |
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150 |
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mW |
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hFE |
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DC current gain |
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IC = −1 mA; VCE = −5 V |
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200 |
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R1 |
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input resistor |
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7 |
10 |
13 |
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kΩ |
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1998 Jul 23 |
2 |
Philips Semiconductors |
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Preliminary specification |
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PNP resistor-equipped transistor |
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PDTA114TE |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
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MAX. |
UNIT |
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VCBO |
collector-base voltage |
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open emitter |
− |
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−50 |
V |
VCEO |
collector-emitter voltage |
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open base |
− |
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−50 |
V |
VEBO |
emitter-base voltage |
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open collector |
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−5 |
V |
IO |
output current (DC) |
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− |
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−100 |
mA |
ICM |
peak collector current |
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− |
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−100 |
mA |
Ptot |
total power dissipation |
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Tamb ≤ 25 °C; note 1 |
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150 |
mW |
Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
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+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
833 |
K/W |
Note |
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1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = −50 |
V |
− |
− |
−100 |
nA |
ICEO |
collector cut-off current |
IB = 0; VCE = −30 |
V |
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−1 |
μA |
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IB = 0; VCE = −30 |
V; Tj = 150 °C |
− |
− |
−50 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = −5 V |
− |
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−100 |
nA |
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hFE |
DC current gain |
IC = −5 V; IC = −1 mA |
200 |
− |
− |
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VCEsat |
collector-emitter saturation voltage |
IC = −10 mA; IB = −0.5 mA |
− |
− |
−150 |
mV |
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R1 |
input resistor |
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7 |
10 |
13 |
kΩ |
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Cc |
collector capacitance |
IE = ie = 0; VCB = −10 V; f = 1 MHz |
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3 |
pF |
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1998 Jul 23 |
3 |
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