Philips pdta114te DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
PDTA114TE
PNP resistor-equipped transistor
Preliminary specification
Supersedes data of 1997 Jul 14
File under Discrete Semiconductors, SC04
1998 Jul 23
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistor PDTA114TE
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuit applications
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
handbook, 4 columns
3
R1
1
12
Top view
MAM359
Fig.1 Simplified outline (SC-75) and symbol.
3
2
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC114TE.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
PDTA114TE 11
3 collector/output
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
I
P
h
CEO
O
CM
tot
FE
collector-emitter voltage open base −−−50 V
output current (DC) −−−100 mA
peak collector current −−−100 mA
total power dissipation T
≤ 25 °C −−150 mW
amb
DC current gain IC= −1 mA; VCE= −5 V 200 −−
R1 input resistor 7 10 13 kΩ
1998 Jul 23 2
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistor PDTA114TE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 833 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −30 V −−−1µA
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
I
B
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −5 V; IC= −1 mA 200 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−3pF
1998 Jul 23 3
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