Philips PDTA114EU Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D102

PDTA114EU

PNP resistor-equipped transistor

Product specification			1999 Apr 13
Supersedes data of 1998 May 18

Philips Semiconductors	Product specification
PNP resistor-equipped transistor	PDTA114EU

	FEATURES
	∙	Built-in bias resistors R1 and R2
		(typ. 10 kΩ each)	handbook, 4 columns	3
	∙	Simplification of circuit design
				3
	∙	Reduces number of components		R1
		and board space.		1
				R2
	APPLICATIONS			2
	∙	Especially suitable for space	1	2
			Top view
		reduction in interface and driver		MAM135
		circuits
	∙	Inverter circuit configurations	Fig.1	Simplified outline (SOT323) and symbol.
		without use of external resistors.

DESCRIPTION										MARKING
PNP resistor-equipped transistor in a
											MARKING
SOT323 plastic package.										TYPE NUMBER
											CODE(1)
NPN complement: PDTC114EU.
			1					3
PINNING										PDTA114EU	03
										Note
			2
			MGA893 - 1							1. = - : Made in Hong Kong.
PIN	DESCRIPTION
										= t : Made in Malaysia.
1	base/input		Fig.2 Equivalent inverter
2	emitter/ground (+)
			symbol.
3	collector/output

1999 Apr 13

2

Philips Semiconductors				Product specification
PNP resistor-equipped transistor				PDTA114EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−50	V
VCEO	collector-emitter voltage	open base	−	−50	V
VEBO	emitter-base voltage	open collector	−	−10	V
VI	input voltage
	positive		−	10	V
	negative		−	−40	V
IO	output current (DC)		−	−100	mA
ICM	peak collector current		−	−100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	625	K/W
Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −50 V	−	−	−100	nA
ICEO	collector cut-off current	IB = 0; VCE = −30 V	−	−	−1	μA
		IB = 0; VCE = −30 V; Tj = 150 °C	−	−	−50	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−400	μA
hFE	DC current gain	IC = −5 mA; VCE = −5 V	30	−	−
VCEsat	collector-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA	−	−	−150	mV
Vi(off)	input-off voltage	IC = −100 μA; VCE = −5 V	−	−1.1	−0.8	V
Vi(on)	input-on voltage	IC = −10 mA; VCE = −0.3 V	−2.5	−1.8	−	V
R1	input resistor		7	10	13	kΩ
R2	resistor ratio		0.8	1	1.2
-------
R1
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	−	3	pF

1999 Apr 13

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