Philips Semiconductors |
Product specification |
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Rectifier diodes |
PBYR245CT series |
Schottky barrier |
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FEATURES
•Low forward volt drop
•Fast switching
•Reverse surge capability
•High thermal cycling performance
•low profile surface mounting package
SYMBOL |
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QUICK REFERENCE DATA |
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a1 |
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a2 |
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VR = 40 V/ 45 V |
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1 |
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3 |
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IO(AV) = 2 A |
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k |
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2 |
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VF ≤ 0.45V |
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GENERAL DESCRIPTION |
PINNING |
SOT223 |
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Dual, common cathode schottky |
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PIN |
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DESCRIPTION |
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4 |
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rectifier diodes in a plastic |
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envelope. Intended for use as |
1 |
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anode 1 |
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output rectifiers in low voltage, high |
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frequency switched mode power |
2 |
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cathode |
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supplies. |
3 |
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anode 2 |
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The PBYR245CT series is supplied |
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in the surface mounting SOT223 |
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tab |
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cathode |
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1 |
2 |
3 |
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package. |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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PBYR2 |
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40CT |
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45CT |
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VRRM |
Peak repetitive reverse |
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40 |
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45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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40 |
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45 |
V |
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voltage |
Tsp ≤ 74 ˚C |
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VR |
Continuous reverse voltage |
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40 |
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45 |
V |
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IO(AV) |
Average rectified output |
square wave; δ = 0.5; Tsp ≤ 119 ˚C |
- |
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2 |
A |
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current (both diodes |
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conducting) |
square wave; δ = 0.5; Tsp ≤ 119 ˚C |
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IFRM |
Repetitive peak forward |
- |
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2 |
A |
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current per diode |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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6 |
A |
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current per diode |
t = 8.3 ms |
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6.6 |
A |
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sinusoidal; Tj = 125 ˚C prior to |
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surge; with reapplied VRRM(max) |
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IRRM |
Peak repetitive reverse |
pulse width and repetition rate |
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1 |
A |
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Tj |
surge current per diode |
limited by Tj max |
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Operating junction |
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150 |
˚C |
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temperature |
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Tstg |
Storage temperature |
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- 40 |
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150 |
˚C |
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-a |
Thermal resistance junction |
pcb mounted, minimum footprint |
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156 |
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K/W |
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to ambient |
pcb mounted, pad area as in fig:1 |
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70 |
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K/W |
July 1998 |
1 |
Rev 1.400 |
Philips Semiconductors Product specification
Rectifier diodes |
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PBYR245CT series |
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Schottky barrier |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
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IF = 1 A; Tj = 125˚C |
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0.41 |
0.45 |
V |
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IR |
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IF = 2 A |
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- |
0.58 |
0.7 |
V |
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Reverse current |
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VR = VRWM |
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0.03 |
0.2 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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1.5 |
10 |
mA |
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Junction capacitance |
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VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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60 |
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pF |
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PRINTED CIRCUIT BOARD |
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Dimensions in mm. |
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36 |
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18 |
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60 |
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4.5 |
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4.6 |
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10 |
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7
15
50
Fig.1. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 μm thick).
July 1998 |
2 |
Rev 1.400 |