Philips Semiconductors Product specification
Rectifier diodes PBYR225CT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 20 V / 25 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 2 A
• low profile surface mounting
package V
F
≤ 0.33V
GENERAL DESCRIPTION PINNING SOT223
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1
output rectifiersin low voltage, high
frequency switched mode power 2 cathode
supplies.
3 anode 2
ThePBYR225CTseriesissupplied
in the surface mounting SOT223 tab cathode
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR2 20CT 25CT
V
RRM
Peak repetitive reverse - 20 25 V
voltage
V
RWM
Working peak reverse - 20 25 V
voltage
V
R
Continuous reverse voltage Tsp ≤ 97 ˚C - 20 25 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tsp ≤ 136 ˚C - 2 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tsp ≤ 136 ˚C - 2 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 6 A
current per diode t = 8.3 ms - 6.6 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C
temperature per diode
T
stg
Storage temperature - 40 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance junction one or both diodes conducting - - 15 K/W
to solder point
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint - 156 - K/W
to ambient pcb mounted, pad area as in fig:1 - 70 - K/W
k
a1
a2
13
2
4
1
23
March 1998 1 Rev 1.100