Philips PBYR220CT, PBYR225CT Datasheet

Philips Semiconductors	Product specification
Rectifier diodes	PBYR225CT series
Schottky barrier

FEATURES

•Low forward volt drop

•Fast switching

•Reverse surge capability

•High thermal cycling performance

•low profile surface mounting package

SYMBOL								QUICK REFERENCE DATA
a1					a2			VR = 20 V / 25 V
1						3		IO(AV) = 2 A
		k		2				VF ≤ 0.33V

GENERAL DESCRIPTION	PINNING						SOT223
Dual, common cathode schottky		PIN			DESCRIPTION					4
rectifier diodes in a plastic
envelope. Intended for use as	1			anode 1
output rectifiers in low voltage, high
frequency switched mode power	2			cathode
supplies.	3			anode 2
The PBYR225CT series is supplied
in the surface mounting SOT223		tab		cathode				1	2	3
package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
		PBYR2		20CT		25CT
VRRM	Peak repetitive reverse		-	20		25	V
	voltage
VRWM	Working peak reverse		-	20		25	V
	voltage	Tsp ≤ 97 ˚C
VR	Continuous reverse voltage		-	20		25	V
IO(AV)	Average rectified output	square wave; δ = 0.5; Tsp ≤ 136 ˚C	-		2		A
	current (both diodes
	conducting)	square wave; δ = 0.5; Tsp ≤ 136 ˚C
IFRM	Repetitive peak forward		-		2		A
	current per diode
IFSM	Non-repetitive peak forward	t = 10 ms	-		6		A
	current per diode	t = 8.3 ms	-		6.6		A
		sinusoidal; Tj = 125 ˚C prior to
		surge; with reapplied VRRM(max)
IRRM	Peak repetitive reverse	pulse width and repetition rate	-		1		A
Tj	surge current per diode	limited by Tj max
	Operating junction		-		150		˚C
	temperature per diode
Tstg	Storage temperature		- 40		150		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-sp	Thermal resistance junction	one or both diodes conducting	-	-	15	K/W
	to solder point
Rth j-a	Thermal resistance junction	pcb mounted, minimum footprint	-	156	-	K/W
	to ambient	pcb mounted, pad area as in fig:1	-	70	-	K/W

March 1998

1

Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes																PBYR225CT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER		CONDITIONS													MIN.	TYP.	MAX.	UNIT
VF	Forward voltage		IF = 1 A; Tj = 125˚C													-	0.28	0.33	V
IR			IF = 2 A													-	0.42	0.51	V
	Reverse current		VR = VRWM													-	0.05	3	mA
Cd			VR = VRWM; Tj = 100˚C													-	5	10	mA
	Junction capacitance		VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C													-	160	-	pF
PRINTED CIRCUIT BOARD
																	Dimensions in mm.
							36
														18
		60
												4.5
		4.6
		9
		10

7

15

50

Fig.1. PCB for thermal resistance and power rating for SOT223.

PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 μm thick).

March 1998

2

Rev 1.100