Philips PBYR220CT, PBYR225CT Datasheet

Philips Semiconductors Product specification
Rectifier diodes PBYR225CT series Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 20 V / 25 V
• High thermal cycling performance I
O(AV)
= 2 A
• low profile surface mounting package V
F
0.33V
GENERAL DESCRIPTION PINNING SOT223
Dual, common cathode schottky PIN DESCRIPTION rectifier diodes in a plastic envelope. Intended for use as 1 anode 1 output rectifiersin low voltage, high frequency switched mode power 2 cathode supplies.
3 anode 2 ThePBYR225CTseriesissupplied in the surface mounting SOT223 tab cathode package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR2 20CT 25CT
V
RRM
Peak repetitive reverse - 20 25 V voltage
V
RWM
Working peak reverse - 20 25 V voltage
V
R
Continuous reverse voltage Tsp 97 ˚C - 20 25 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tsp 136 ˚C - 2 A current (both diodes conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tsp 136 ˚C - 2 A current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 6 A current per diode t = 8.3 ms - 6.6 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C temperature per diode
T
stg
Storage temperature - 40 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance junction one or both diodes conducting - - 15 K/W to solder point
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint - 156 - K/W to ambient pcb mounted, pad area as in fig:1 - 70 - K/W
k
a1
a2
13
2
4
1
23
March 1998 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes PBYR225CT series Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 1 A; Tj = 125˚C - 0.28 0.33 V
IF = 2 A - 0.42 0.51 V
I
R
Reverse current VR = V
RWM
- 0.05 3 mA
VR = V
RWM
; Tj = 100˚C - 5 10 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 160 - pF
PRINTED CIRCUIT BOARD
Dimensions in mm.
Fig.1. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
36
60
9
10
4.6
18
4.5
7
15
50
March 1998 2 Rev 1.100
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