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DISCRETE SEMICONDUCTORS
DATA SHEET
page
M3D087
PBYR2150CT
Schottky barrier double diode
Preliminary specification |
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1996 Oct 14 |
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Philips Semiconductors |
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Preliminary specification |
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Schottky barrier double diode |
PBYR2150CT |
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FEATURES |
DESCRIPTION |
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∙Low switching losses
∙Low forward voltage
∙High breakdown voltage
∙Fast recovery time
∙Guard ring protected
∙Plastic SMD package.
APPLICATIONS
∙Low power, switched-mode power supplies
∙Rectification
∙Polarity protection.
PINNING
PIN |
DESCRIPTION |
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1 |
anode (a1) |
2 |
common cathode |
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3 |
anode (a2) |
4 |
common cathode |
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LIMITING VALUES
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package.
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4 |
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4 |
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1 |
3 |
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2 |
1 |
2 |
3 |
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Top view |
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MAM086 |
Marking code: BYR215.
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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150 |
V |
VRRM |
repetitive peak reverse voltage |
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− |
150 |
V |
VRWM |
crest working reverse voltage |
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150 |
V |
IF(AV) |
average forward current |
Tamb = 85 °C; Rth j-a = 70 K/W; |
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1 |
A |
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note 1; VR(equiv) = 0.2 V; note 2 |
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IFSM |
non-repetitive peak forward current |
t = 8.3 ms half sinewave; |
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10 |
A |
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JEDEC method |
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1996 Oct 14 |
2 |
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