Philips PBYR2150CT Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

age

M3D087

PBYR2150CT

Schottky barrier double diode

Preliminary specification

1996 Oct 14

Philips Semiconductors Preliminary specification

Schottky barrier double diode PBYR2150CT

FEATURES

• Low switching losses

• Low forward voltage

• High breakdown voltage

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

APPLICATIONS

• Low power, switched-mode
power supplies

• Rectification

• Polarity protection.

PINNING

PIN DESCRIPTION

1 anode (a

)

1

2 common cathode
3 anode (a

)

2

4 common cathode

DESCRIPTION

The PBYR2150CT is a Schottky barrier double diode, fabricated in planar
technology, and encapsulated in a SOT223 plastic SMD package.

4

4

1

2

123

Top view

Marking code: BYR215.

3

MAM086

Fig.1 Simplified outline (SOT223), pin configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V

R

V

RRM

V

RWM

I

F(AV)

I

FSM

continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current

=85°C; R

amb

note 1; V

R(equiv)

= 70 K/W;

th j-a

= 0.2 V; note 2

T

non-repetitive peak forward current t = 8.3 ms half sinewave;

−

−

−

−

−

150 V
150 V
150 V
1A

10 A

JEDEC method

1996 Oct 14 2