DISCRETE SEMICONDUCTORS
page
M3D087
PBYR2100CT series
Schottky barrier double diodes
Product specification |
1996 Oct 14 |
Supersedes data of 1996 May 03
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Schottky barrier double diodes |
PBYR2100CT series |
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FEATURES
∙Low switching losses
∙High breakdown voltage
∙Fast recovery time
∙Guard ring protected
∙Plastic SMD package.
APPLICATIONS
∙Low power, switched-mode power supplies
∙Rectification
∙Polarity protection.
DESCRIPTION
The PBYR2100CT series consists of Schottky barrier double diodes, fabricated in planar technology, and encapsulated in SOT223 plastic SMD packages.
PINNING
PIN |
DESCRIPTION |
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1 |
anode (a1) |
2 |
common cathode |
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3 |
anode (a2) |
4 |
common cathode |
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MARKING
TYPE NUMBER
MARKING
CODE
PBYR280CT BYR28
PBYR290CT BYR29
PBYR2100CT BYR210
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4 |
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4 |
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1 |
3 |
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2 |
1 |
2 |
3 |
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Top view |
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MAM086 |
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
1996 Oct 14 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier double diodes |
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PBYR2100CT series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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PBYR280CT |
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− |
80 |
V |
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PBYR290CT |
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− |
90 |
V |
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PBYR2100CT |
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− |
100 |
V |
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VRRM |
repetitive peak reverse voltage |
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PBYR280CT |
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− |
80 |
V |
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PBYR290CT |
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− |
90 |
V |
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PBYR2100CT |
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− |
100 |
V |
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VRWM |
crest working reverse voltage |
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PBYR280CT |
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− |
80 |
V |
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PBYR290CT |
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− |
90 |
V |
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PBYR2100CT |
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100 |
V |
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IF(AV) |
average forward current |
Tamb = 85 °C; see Fig.2; |
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1 |
A |
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Rth j-a = 70 K/W; note 1; |
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VR(equiv) = 0.2 V; note 2 |
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IFSM |
non-repetitive peak forward current |
t = 8.3 ms half sine wave; |
− |
10 |
A |
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JEDEC method |
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IRSM |
non-repetitive peak reverse current |
tp = 100 μs |
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0.5 |
A |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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−65 |
+150 |
°C |
Tamb |
operating ambient temperature |
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85 |
°C |
Notes
1.Refer to SOT223 standard mounting conditions.
2.For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.
1996 Oct 14 |
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