Philips PBYR20100CTB, PBYR2060CT, PBYR2080CT, PBYR2080CTB Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR20100CT, PBYR20100CTB series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
= 60 V/ 80 V/ 100 V
R
= 20 A
O(AV)
VF ≤ 0.7 V
PIN DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
1
2
123
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR20 60CT 80CT 100CT
PBYR20 60CTB 80CTB 100CTB
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
T
j
T
stg
1. It is not possible to make connection to pin 2 of the SOT404 package.
Peak repetitive reverse - 60 80 100 V
voltage
Working peak reverse - 60 80 100 V
voltage
Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V
Average rectified output square wave; δ = 0.5; - 20 A
current (both diodes Tmb ≤ 133 ˚C
conducting)
Repetitive peak forward square wave; δ = 0.5; - 20 A
current per diode Tmb ≤ 133 ˚C
Non-repetitive peak forward t = 10 ms - 135 A
current per diode t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
Peak repetitive reverse pulse width and repetition rate - 1 A
surge; with reapplied V
surge current per diode limited by T
j max
RRM(max)
Operating junction - 150 ˚C
temperature
Storage temperature - 65 175 ˚C
November 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR20100CT, PBYR20100CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction per diode - - 2 K/W
to mounting base both diodes - - 1 K/W
Thermal resistance junction SOT78 package in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint, FR4 board
Forward voltage IF = 10 A; Tj = 125˚C - 0.61 0.7 V
IF = 20 A; Tj = 125˚C - 0.74 0.85 V
IF = 20 A - 0.88 0.95 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 420 - pF
VR = V
RWM
; Tj = 125˚C - 5 15 mA
RWM
- 5 150 µA
November 1998 2 Rev 1.300
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