Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
FEATURESSYMBOLQUICK REFERENCE DATA
• Low forward volt drop
• Fast switchingV
• Reverse surge capability
• High thermal cycling performanceI
a1
13
a2
• Isolated mounting tab
k
2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CTF series is supplied in the SOT186 package.
The PBYR2045CTX series is supplied in the SOT186A package.
PINNINGSOT186SOT186A
= 40 V/ 45 V
R
= 20 A
O(AV)
VF ≤ 0.57V
PINDESCRIPTION
case
case
1anode 1 (a)
2cathode (k)
3anode 2 (a)
tabisolated
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT
PBYR2040CTF45CTF
PBYR2040CTX45CTX
V
V
V
I
O(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse-4045V
voltage
Working peak reverse-4045V
voltage
Continuous reverse voltageThs ≤ 84 ˚C-4045V
Average rectified outputsquare wave; δ = 0.5;-20A
current (both diodesThs ≤ 78 ˚C
conducting)
Repetitive peak forwardsquare wave; δ = 0.5;-20A
current per diodeThs ≤ 78 ˚C
Non-repetitive peak forwardt = 10 ms-100A
current per diodet = 8.3 ms-110A
sinusoidal; Tj = 125 ˚C prior to
Peak repetitive reversepulse width and repetition rate-1A
surge; with reapplied V
surge current per diodelimited by T
j max
RRM(max)
Operating junction-150˚C
temperature
Storage temperature- 65175˚C
October 19981Rev 1.300
Philips SemiconductorsProduct specification
Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETERCONDITIONSMIN.TYP. MAX. UNIT
V
isol
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETERCONDITIONSMIN.TYP. MAX. UNIT
R
th j-hs
R
th j-a
Peak isolation voltage fromSOT186 package; R.H. ≤ 65%; clean and--1500V
all terminals to externaldustfree
heatsink
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;--2500V
all terminals to externalsinusoidal waveform; R.H. ≤ 65%; clean
heatsinkand dustfree
Capacitance from pin 2 tof = 1 MHz-10-pF
external heatsink
Thermal resistance junctionper diode--6K/W
to heatsinkboth diodes--5K/W
(with heatsink compound)
Thermal resistance junctionin free air-55-K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETERCONDITIONSMIN.TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltageIF = 10 A; Tj = 125˚C-0.450.57V
IF = 20 A; Tj = 125˚C-0.640.72V
IF = 20 A-0.640.84V
Reverse currentVR = V
Junction capacitanceVR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C-380-pF
VR = V
RWM
; Tj = 100˚C-2235mA
RWM
-0.31.3mA
October 19982Rev 1.300
Philips SemiconductorsProduct specification
Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
F(AV)
0.5
t
1.9
.
p
T
Ths(max) (C)
D = 1.0
p
t
D =
T
t
F(AV)
Ths(max) (C)
a = 1.57
F(AV)
90
102
114
126
138
150
) per
102
108
114
120
126
132
138
144
150
) per
Forward dissipation, PF (W)
10
Vo = 0.42 V
Rs = 0.015 Ohms
8
6
4
2
0
051015
0.1
Average forward current, IF(AV) (A)
PBYR1045
0.2
I
Fig.1. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
=I
F(AV)
Forward dissipation, PF (W)
8
Vo = 0.42 V
Rs = 0.015 Ohms
7
6
5
4
3
2
1
0
0246810
4
Average forward current, IF(AV) (A)
F(RMS)
2.8
x √D.
PBYR1045
2.2
Fig.2. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
Reverse current, IR (mA)
100
125 C
10
100 C
75 C
1
50 C
0.1
Tj = 25 C
0.01
0
2550
Reverse voltage, VR (V)
PBYR2045CT
Fig.4. Typical reverse leakage current per diode;
1000
100
10
Cd / pF
1
IR = f(VR); parameter T
10100
VR / V
j
PBYR2045CT
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Forward current, IF (A)
50
Tj = 25 C
Tj = 125 C
40
30
20
10
0
00.20.40.60.811.21.4
typ
max
Forward voltage, VF (V)
PBYR2045CT
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
0.01
1us10us 100us1ms10ms 100ms1s10s
pulse width, tp (s)
t
p
P
D
T
t
p
D =
T
t
PBYR2045ctx
Fig.6. Transient thermal impedance per diode;
Z
= f(tp).
th j-hs
October 19983Rev 1.300
Philips SemiconductorsProduct specification
Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.5 max
not tinned
10.2
max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5
min
4.4
max
2.9 max
7.9
7.5
17
max
123
M
0.4
5.08
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
2.54
top view
0.55 max
1.3
October 19984Rev 1.300
Philips SemiconductorsProduct specification
Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 19985Rev 1.300
Philips SemiconductorsProduct specification
Rectifier diodesPBYR2045CTF, PBYR2045CTX series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 19986Rev 1.300
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