Philips PBYR2040CTF, PBYR2045CTF Datasheet

Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• High thermal cycling performance I
a1
13
a2
• Isolated mounting tab
k
2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CTF series is supplied in the SOT186 package. The PBYR2045CTX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
= 40 V/ 45 V
R
= 20 A
O(AV)
VF 0.57V
PIN DESCRIPTION
case
case
1 anode 1 (a) 2 cathode (k) 3 anode 2 (a)
tab isolated
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR20 40CTF 45CTF PBYR20 40CTX 45CTX
V V V
I
O(AV)
I
FRM
I
FSM
I
RRM
T T
RRM
RWM
R
j
stg
Peak repetitive reverse - 40 45 V voltage Working peak reverse - 40 45 V voltage Continuous reverse voltage Ths 84 ˚C - 40 45 V
Average rectified output square wave; δ = 0.5; - 20 A current (both diodes Ths 78 ˚C conducting) Repetitive peak forward square wave; δ = 0.5; - 20 A current per diode Ths 78 ˚C Non-repetitive peak forward t = 10 ms - 100 A current per diode t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
Peak repetitive reverse pulse width and repetition rate - 1 A
surge; with reapplied V
surge current per diode limited by T
j max
RRM(max)
Operating junction - 150 ˚C temperature Storage temperature - 65 175 ˚C
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Peak isolation voltage from SOT186 package; R.H. 65%; clean and - - 1500 V all terminals to external dustfree heatsink
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V all terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree
Capacitance from pin 2 to f = 1 MHz - 10 - pF external heatsink
Thermal resistance junction per diode - - 6 K/W to heatsink both diodes - - 5 K/W
(with heatsink compound) Thermal resistance junction in free air - 55 - K/W to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 10 A; Tj = 125˚C - 0.45 0.57 V
IF = 20 A; Tj = 125˚C - 0.64 0.72 V
IF = 20 A - 0.64 0.84 V Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 380 - pF
VR = V
RWM
; Tj = 100˚C - 22 35 mA
RWM
- 0.3 1.3 mA
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
F(AV)
0.5
t
1.9
.
p
T
Ths(max) (C)
D = 1.0
p
t
D =
T
t
F(AV)
Ths(max) (C)
a = 1.57
F(AV)
90
102
114
126
138
150
) per
102 108 114 120 126 132 138 144 150
) per
Forward dissipation, PF (W)
10
Vo = 0.42 V Rs = 0.015 Ohms
8
6
4
2
0
0 5 10 15
0.1
Average forward current, IF(AV) (A)
PBYR1045
0.2
I
Fig.1. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
=I
F(AV)
Forward dissipation, PF (W)
8
Vo = 0.42 V Rs = 0.015 Ohms
7 6 5 4 3 2 1 0
0246810
4
Average forward current, IF(AV) (A)
F(RMS)
2.8
x √D.
PBYR1045
2.2
Fig.2. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
Reverse current, IR (mA)
100
125 C
10
100 C
75 C
1
50 C
0.1 Tj = 25 C
0.01 0
25 50
Reverse voltage, VR (V)
PBYR2045CT
Fig.4. Typical reverse leakage current per diode;
1000
100
10
Cd / pF
1
IR = f(VR); parameter T
10 100
VR / V
j
PBYR2045CT
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Forward current, IF (A)
50
Tj = 25 C Tj = 125 C
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
typ
max
Forward voltage, VF (V)
PBYR2045CT
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
0.01 1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
t
p
P
D
T
t
p
D =
T
t
PBYR2045ctx
Fig.6. Transient thermal impedance per diode;
Z
= f(tp).
th j-hs
October 1998 3 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.5 max
not tinned
10.2 max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5 min
4.4
max
2.9 max
7.9
7.5 17
max
123
M
0.4
5.08
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
2.54
top view
0.55 max
1.3
October 1998 4 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5 min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8 max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8 max
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998 5 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998 6 Rev 1.300
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