Philips PBYR20100CT, PBYR2060CTB Datasheet

0 (0)
Philips PBYR20100CT, PBYR2060CTB Datasheet

Philips Semiconductors Product specification

Rectifier diodes

 

 

PBYR20100CT, PBYR20100CTB series

 

Schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

SYMBOL

 

 

 

 

 

 

QUICK REFERENCE DATA

 

• Low forward volt drop

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR = 60 V/ 80 V/ 100 V

 

• Fast switching

a1

 

 

 

a2

 

 

• Reverse surge capability

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

3

 

IO(AV) = 20 A

 

• High thermal cycling performance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

• Low thermal resistance

 

 

 

 

 

 

 

 

VF 0.7 V

 

 

 

 

k

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR20100CT series is supplied in the SOT78 conventional leaded package.

The PBYR20100CTB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

PIN DESCRIPTION

tab

1anode 1 (a)

2cathode (k) 1

3anode 2 (a)

tab

cathode (k)

1 2 3

 

 

tab

 

2

1

3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

 

UNIT

 

 

 

 

 

 

 

 

 

 

PBYR20

 

60CT

80CT

100CT

 

 

 

PBYR20

 

60CTB

80CTB

100CTB

 

VRRM

Peak repetitive reverse

 

-

60

80

100

V

 

voltage

 

 

 

 

 

 

VRWM

Working peak reverse

 

-

60

80

100

V

 

voltage

Tmb 139 ˚C

 

 

 

 

 

VR

Continuous reverse voltage

-

60

80

100

V

IO(AV)

Average rectified output

square wave; δ = 0.5;

-

 

20

 

A

 

current (both diodes

Tmb 133 ˚C

 

 

 

 

 

IFRM

conducting)

square wave; δ = 0.5;

 

 

 

 

 

Repetitive peak forward

-

 

20

 

A

 

current per diode

Tmb 133 ˚C

 

 

 

 

 

IFSM

Non-repetitive peak forward

t = 10 ms

-

 

135

 

A

 

current per diode

t = 8.3 ms

-

 

150

 

A

 

 

sinusoidal; Tj = 125 ˚C prior to

 

 

 

 

 

IRRM

 

surge; with reapplied VRRM(max)

 

 

 

 

 

Peak repetitive reverse

pulse width and repetition rate

-

 

1

 

A

 

surge current per diode

limited by Tj max

 

 

 

 

 

Tj

Operating junction

 

-

 

150

 

˚C

 

temperature

 

 

 

 

 

 

Tstg

Storage temperature

 

- 65

 

175

 

˚C

1. It is not possible to make connection to pin 2 of the SOT404 package.

November 1998

1

Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes

PBYR20100CT, PBYR20100CTB series

 

Schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

Rth j-mb

Thermal resistance junction

per diode

-

-

2

K/W

 

 

to mounting base

both diodes

-

-

1

K/W

 

Rth j-a

Thermal resistance junction

SOT78 package in free air

-

60

-

K/W

 

 

to ambient

SOT404 package, pcb mounted, minimum

-

50

-

K/W

 

 

 

footprint, FR4 board

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

 

All characteristics are per diode at Tj = 25 ˚C unless otherwise specified

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

VF

Forward voltage

IF = 10 A; Tj = 125˚C

-

0.61

0.7

V

 

 

 

IF = 20 A; Tj = 125˚C

-

0.74

0.85

V

 

 

 

IF = 20 A

-

0.88

0.95

V

 

IR

Reverse current

VR = VRWM

-

5

150

μA

 

Cd

 

VR = VRWM; Tj = 125˚C

-

5

15

mA

 

Junction capacitance

VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C

-

420

-

pF

 

November 1998

2

Rev 1.300

Loading...
+ 4 hidden pages