Philips Semiconductors Product specification
Rectifier diodes |
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PBYR1545CTF, PBYR1545CTX series |
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Schottky barrier |
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FEATURES |
SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 40 V/ 45 V |
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• Fast switching |
a1 |
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a2 |
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• Reverse surge capability |
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1 |
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3 |
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IO(AV) = 15 A |
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• High thermal cycling performance |
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• Isolated mounting tab |
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VF ≤ 0.57V |
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k |
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2 |
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GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR1545CTF series is supplied in the SOT186 package.
The PBYR1545CTX series is supplied in the SOT186A package.
PINNING |
SOT186 |
SOT186A |
PIN DESCRIPTION
1anode 1 (a)
2cathode (k)
3anode 2 (a) tab isolated
case |
case |
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1 |
2 |
3 |
1 |
2 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
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UNIT |
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PBYR15 |
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40CTF |
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45CTF |
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PBYR15 |
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40CTX |
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45CTX |
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VRRM |
Peak repetitive reverse |
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40 |
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45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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40 |
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45 |
V |
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voltage |
Ths ≤ 89 ˚C |
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VR |
Continuous reverse voltage |
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40 |
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45 |
V |
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IO(AV) |
Average rectified output |
square wave; δ = 0.5; |
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15 |
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A |
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current (both diodes |
Ths ≤ 93 ˚C |
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IFRM |
conducting) |
square wave; δ = 0.5; |
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Repetitive peak forward |
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15 |
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A |
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current per diode |
Ths ≤ 93 ˚C |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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100 |
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A |
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current per diode |
t = 8.3 ms |
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110 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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IRRM |
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surge; with reapplied VRRM(max) |
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Peak repetitive reverse |
pulse width and repetition rate |
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1 |
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A |
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surge current per diode |
limited by Tj max |
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Tj |
Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
175 |
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˚C |
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October 1998 |
1 |
Rev 1.300 |
Philips Semiconductors Product specification
Rectifier diodes |
PBYR1545CTF, PBYR1545CTX series |
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Schottky barrier |
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ISOLATION LIMITING VALUE & CHARACTERISTIC |
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Ths = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Visol |
Peak isolation voltage from |
SOT186 package; R.H. ≤ 65%; clean and |
- |
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1500 |
V |
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all terminals to external |
dustfree |
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heatsink |
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Visol |
R.M.S. isolation voltage from |
SOT186A package; f = 50-60 Hz; |
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2500 |
V |
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all terminals to external |
sinusoidal waveform; R.H. ≤ 65%; clean |
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heatsink |
and dustfree |
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Cisol |
Capacitance from pin 2 to |
f = 1 MHz |
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10 |
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pF |
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external heatsink |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Thermal resistance junction |
per diode |
- |
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6 |
K/W |
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to heatsink |
both diodes |
- |
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5.2 |
K/W |
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(with heatsink compound) |
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Rth j-a |
Thermal resistance junction |
in free air |
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55 |
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K/W |
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to ambient |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 7.5 A; Tj = 125˚C |
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0.44 |
0.57 |
V |
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IF = 15 A; Tj = 125˚C |
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0.63 |
0.72 |
V |
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IR |
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IF = 15 A |
- |
0.62 |
0.84 |
V |
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Reverse current |
VR = VRWM |
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0.22 |
1 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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18 |
25 |
mA |
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Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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270 |
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pF |
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October 1998 |
2 |
Rev 1.300 |
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