Philips PBYR1035CTD, PBYR1045CTD, PBYR1040CTD Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR1045CTD series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 10 A
• Low thermal resistance
VF ≤ 0.6 V
GENERAL DESCRIPTION PINNING SOT428
Dual schottky rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in low voltage, high frequency 1 anode 1
switched mode power supplies.
2 cathode
1
The PBYR1045CTD series is
supplied in the SOT428 surface 3 anode 2
mounting package.
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 40CTD 45CTD
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 108 ˚C - 40 45 V
I
O(AV)
Average rectified forward square wave; δ = 0.5; - 10 A
current (both diodes Tmb ≤ 127 ˚C
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; - 10 A
current per diode Tmb ≤ 127 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current per diode t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
k
a1
a2
13
2
1
2
3
tab
1 it is not possible to make connection to pin 2 of the SOT428 package
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1045CTD series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 4.5 K/W
to mounting base both diodes - - 3 K/W
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 5 A; Tj = 125˚C - 0.52 0.6 V
IF = 10 A; Tj = 125˚C - 0.7 0.77 V
IF = 10 A - 0.72 0.87 V
I
R
Reverse current VR = V
RWM
- 0.06 0.5 mA
VR = V
RWM
; Tj = 100˚C - 6 15 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 155 - pF
July 1998 2 Rev 1.200
Loading...