Philips PBYR1035X, PBYR1045X, PBYR1040X Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR1045F, PBYR1045X series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 10 A
• Isolated mounting tab
VF ≤ 0.59 V
GENERAL DESCRIPTION
Schottkyrectifierdiodesinaplasticenvelope withelectrically isolated mounting tab. Intended foruseasoutputrectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1045F series is supplied in the SOD100 package.
The PBYR1045X series is supplied in the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode
2 anode
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 40F 45F
PBYR10 40X 45X
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Ths ≤ 95 ˚C - 40 45 V
I
F(AV)
Average rectified forward square wave; δ = 0.5; Ths ≤ 112 ˚C - 10 A
current
I
FRM
Repetitive peak forward square wave; δ = 0.5; Ths ≤ 112 ˚C - 20 A
current
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
k a
12
12
case
12
case
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1045F, PBYR1045X series
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
both terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 1 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction with heatsink compound - - 5.5 K/W
to heatsink
R
th j-a
Thermal resistance junction in free air - 55 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 10 A; Tj = 125˚C - 0.5 0.59 V
IF = 20 A; Tj = 125˚C - 0.69 0.75 V
IF = 20 A - 0.65 0.87 V
I
R
Reverse current VR = V
RWM
- 0.2 1.3 mA
VR = V
RWM
; Tj = 100˚C - 22 35 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 350 - pF
July 1998 2 Rev 1.200
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