Philips Semiconductors Product specification
Rectifier diodes |
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PBYR1045F, PBYR1045X series |
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Schottky barrier |
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FEATURES |
SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 40 V/ 45 V |
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• Fast switching |
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k |
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a |
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• Reverse surge capability |
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IF(AV) = 10 A |
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• High thermal cycling performance |
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1 |
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2 |
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• Isolated mounting tab |
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VF ≤ 0.59 V |
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GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR1045F series is supplied in the SOD100 package.
The PBYR1045X series is supplied in the SOD113 package.
PINNING |
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SOD100 |
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SOD113 |
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PIN |
DESCRIPTION |
case |
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case |
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1 cathode |
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2 anode
tab isolated
1 |
2 |
1 |
2 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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PBYR10 |
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40F |
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45F |
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PBYR10 |
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40X |
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45X |
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VRRM |
Peak repetitive reverse |
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40 |
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45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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40 |
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45 |
V |
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voltage |
Ths ≤ 95 ˚C |
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VR |
Continuous reverse voltage |
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40 |
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45 |
V |
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IF(AV) |
Average rectified forward |
square wave; δ = 0.5; Ths ≤ 112 ˚C |
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10 |
A |
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current |
square wave; δ = 0.5; Ths ≤ 112 ˚C |
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IFRM |
Repetitive peak forward |
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20 |
A |
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current |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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100 |
A |
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current |
t = 8.3 ms |
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110 |
A |
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sinusoidal; Tj = 125 ˚C prior to |
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IRRM |
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surge; with reapplied VRRM(max) |
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Peak repetitive reverse |
pulse width and repetition rate |
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1 |
A |
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surge current |
limited by Tj max |
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Tj |
Operating junction |
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150 |
˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
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175 |
˚C |
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July 1998 |
1 |
Rev 1.200 |
Philips Semiconductors Product specification
Rectifier diodes |
PBYR1045F, PBYR1045X series |
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Schottky barrier |
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ISOLATION LIMITING VALUE & CHARACTERISTIC |
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Ths = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Visol |
Peak isolation voltage from |
SOD100 package; R.H. ≤ 65%; clean and |
- |
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1500 |
V |
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both terminals to external |
dustfree |
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heatsink |
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Visol |
R.M.S. isolation voltage from |
SOD113 package; f = 50-60 Hz; |
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2500 |
V |
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both terminals to external |
sinusoidal waveform; R.H. ≤ 65%; clean |
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heatsink |
and dustfree |
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Cisol |
Capacitance from pin 1 to |
f = 1 MHz |
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10 |
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pF |
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external heatsink |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Thermal resistance junction |
with heatsink compound |
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5.5 |
K/W |
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to heatsink |
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Rth j-a |
Thermal resistance junction |
in free air |
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55 |
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K/W |
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to ambient |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 10 A; Tj = 125˚C |
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0.5 |
0.59 |
V |
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IF = 20 A; Tj = 125˚C |
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0.69 |
0.75 |
V |
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IR |
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IF = 20 A |
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0.65 |
0.87 |
V |
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Reverse current |
VR = VRWM |
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0.2 |
1.3 |
mA |
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VR = VRWM; Tj = 100˚C |
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22 |
35 |
mA |
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Cd |
Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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350 |
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pF |
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July 1998 |
2 |
Rev 1.200 |
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