Philips PBYR1035D, PBYR1045D, PBYR1040D Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR1045D series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 10 A
• Low thermal resistance
VF ≤ 0.57 V
GENERAL DESCRIPTION PINNING SOT428
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
output rectifiersin low voltage, high 1 no connection
frequency switched mode power
supplies. 2 cathode
1
ThePBYR1045Dseriesissupplied 3 anode
in the surface mounting SOT428
package. tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 40D 45D
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 113 ˚C - 40 45 V
I
F(AV)
Average rectified forward square wave; δ = 0.5; Tmb ≤ 134 ˚C - 10 A
current
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 134 ˚C - 20 A
current
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
k a
tab 3
1
2
3
tab
1 It is not possible to make connection to pin 2 of the SOT428 package.
July 1998 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes PBYR1045D series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 2 K/W
to mounting base
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 10 A; Tj = 125˚C - 0.5 0.57 V
IF = 20 A; Tj = 125˚C - 0.74 0.8 V
IF = 20 A - 0.65 0.84 V
I
R
Reverse current VR = V
RWM
- 0.2 1.3 mA
VR = V
RWM
; Tj = 100˚C - 22 35 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 350 - pF
July 1998 2 Rev 1.100
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