Philips PBYR1035CTD, PBYR1045CTD, PBYR1040CTD Datasheet

Philips Semiconductors Product specification

Rectifier diodes

PBYR1045CTD series

Schottky barrier

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

VR = 40 V/ 45 V

• Fast switching

a1

a2

• Reverse surge capability

1

3

IO(AV) = 10 A

• High thermal cycling performance

• Low thermal resistance

VF ≤ 0.6 V

k

2

GENERAL DESCRIPTION

PINNING

SOT428

Dual

schottky rectifier diodes

PIN

DESCRIPTION

tab

intended for use as output rectifiers

in low voltage, high frequency

1

anode 1

switched mode power supplies.

2

cathode1

The

PBYR1045CTD series is

supplied in the SOT428 surface

3

anode 2

mounting package.

tab

cathode

2

1

3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PBYR10

40CTD

45CTD

VRRM

Peak repetitive reverse

-

40

45

V

voltage

VRWM

Working peak reverse

-

40

45

V

voltage

Tmb ≤ 108 ˚C

VR

Continuous reverse voltage

-

40

45

V

IO(AV)

Average rectified forward

square wave; δ = 0.5;

-

10

A

current (both diodes

Tmb

≤ 127 ˚C

conducting)

square wave; δ = 0.5;

IFRM

Repetitive peak forward

-

10

A

IFSM

current per diode

Tmb

≤ 127 ˚C

Non-repetitive peak forward

t = 10 ms

-

100

A

current per diode

t = 8.3 ms

-

110

A

sinusoidal; Tj = 125 ˚C prior to

surge; with reapplied VRRM(max)

IRRM

Peak repetitive reverse

pulse width and repetition rate

-

1

A

Tj

surge current per diode

limited by Tj max

Operating junction

-

150

˚C

temperature

Tstg

Storage temperature

- 65

175

˚C

1 it is not possible to make connection to pin 2 of the SOT428 package

July 1998

1

Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes			PBYR1045CTD series
Schottky barrier
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

Rth j-mb

Rth j-a

Thermal resistance junction	per diode
to mounting base	both diodes
Thermal resistance junction	pcb mounted, minimum footprint, FR4
to ambient	board

-	-	4.5	K/W
-	-	3	K/W
-	50	-	K/W

ELECTRICAL CHARACTERISTICS

All characteristics are per diode at Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
VF	Forward voltage	IF = 5 A; Tj = 125˚C		-	0.52	0.6	V
		IF = 10	A; Tj = 125˚C	-	0.7	0.77	V
IR		IF = 10	A	-	0.72	0.87	V
	Reverse current	VR = VRWM		-	0.06	0.5	mA
Cd		VR = VRWM; Tj = 100˚C		-	6	15	mA
	Junction capacitance	VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C		-	155	-	pF

July 1998

2

Rev 1.200