PBYR1035B
Philips Semiconductors Product specification
Rectifier diodes PBYR1045B series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 10 A
• Low thermal resistance
V
F
≤ 0.57 V
GENERAL DESCRIPTION PINNING SOT404
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
output rectifiersin low voltage, high 1 no connection
frequency switched mode power
supplies. 2 cathode
1
The PBYR1045B seriesissupplied 3 anode
in the surface mounting SOT404
package. tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 40B 45B
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage T
mb
≤ 113 ˚C - 40 45 V
I
F(AV)
Average rectified forward square wave; δ = 0.5; T
mb
≤ 136 ˚C - 10 A
current
I
FRM
Repetitive peak forward square wave; δ = 0.5; T
mb
≤ 136 ˚C - 20 A
current
I
FSM
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
k a
tab 3
13
mb
2
1 It is not possible to make connection to pin 2 of the SOT404 package.
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1045B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 2 K/W
to mounting base
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 10 A; T
j
= 125˚C - 0.5 0.57 V
I
F
= 20 A; T
j
= 125˚C - 0.69 0.72 V
I
F
= 20 A - 0.65 0.84 V
I
R
Reverse current V
R
= V
RWM
- 0.2 1.3 mA
V
R
= V
RWM
; T
j
= 100˚C - 22 35 mA
C
d
Junction capacitance V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C - 350 - pF
July 1998 2 Rev 1.200
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