Philips Semiconductors Product specification
Rectifier diodes PBYR10100X series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
12
• Isolated mounting tab
GENERAL DESCRIPTION PINNING SOD113 (SOT186A)
= 100 V
R
= 10 A
F(AV)
VF ≤ 0.74 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope with electrically isolated
case
mounting tab. Intended for use as 1 cathode
output rectifiersin low voltage, high
frequency switched mode power 2 anode
supplies.
case isolated
The PBYR10100 series issupplied
intheconventionalleaded SOD113
package.
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 100
voltage V
Working peak reverse - 100 V
voltage
Continuous reverse voltage Ths ≤ 115 ˚C - 100 V
Average rectified forward square wave; δ = 0.5; Ths ≤ 114 ˚C - 10 A
current
Repetitive peak forward square wave; δ = 0.5; Ths ≤ 114 ˚C - 20 A
current
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
Peak repetitive reverse pulse width and repetition rate - 1 A
surge; with reapplied V
surge current limited by T
j max
RRM(max)
Operating junction - 150 ˚C
temperature
Storage temperature - 65 150 ˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
November 1999 1 Rev 1.000
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
Philips Semiconductors Product specification
Rectifier diodes PBYR10100X series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction - - 4 K/W
to heat sink
Thermal resistance junction in free air - 55 - K/W
to ambient
Forward voltage IF = 10 A; Tj = 125˚C - 0.64 0.74 V
IF = 20 A; Tj = 125˚C - 0.79 0.90 V
IF = 20 A - 0.94 1.00 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 420 - pF
VR = V
RWM
; Tj = 125˚C - 5 15 mA
RWM
- 5 150 µA
November 1999 2 Rev 1.000