Philips Semiconductors |
Product specification |
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Rectifier diodes |
PBYR10100B series |
Schottky barrier |
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FEATURES |
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• Low forward volt drop |
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• Fast switching |
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k |
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a |
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• Reverse surge capability |
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• High thermal cycling performance |
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tab |
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3 |
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• Low thermal resistance |
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GENERAL DESCRIPTION |
PINNING |
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Schottky rectifier diodes in a plastic |
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PIN |
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DESCRIPTION |
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envelope. Intended for use as |
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output rectifiers in low voltage, high |
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no connection |
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frequency switched |
mode power |
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cathode1 |
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supplies. |
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2 |
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The PBYR10100B |
series is |
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anode |
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supplied in the surface mounting |
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SOT404 package. |
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tab |
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cathode |
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QUICK REFERENCE DATA
VR = 60 V/ 80 V/ 100 V
IF(AV) = 10 A
VF ≤ 0.7 V
SOT404
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tab |
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2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
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PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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PBYR10 |
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60B |
80B |
100B |
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VRRM |
Peak repetitive reverse |
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60 |
80 |
100 |
V |
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voltage |
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VRWM |
Working peak reverse |
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60 |
80 |
100 |
V |
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voltage |
Tmb ≤ 139 ˚C |
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VR |
Continuous reverse voltage |
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60 |
80 |
100 |
V |
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IF(AV) |
Average rectified forward |
square wave; δ = 0.5; Tmb ≤ 133 ˚C |
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10 |
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A |
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current |
square wave; δ = 0.5; Tmb ≤ 133 ˚C |
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IFRM |
Repetitive peak forward |
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20 |
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A |
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current |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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135 |
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A |
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current |
t = 8.3 ms |
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150 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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surge; with reapplied VRRM(max) |
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IRRM |
Peak repetitive reverse |
pulse width and repetition rate |
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1 |
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A |
Tj |
surge current |
limited by Tj max |
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Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
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175 |
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˚C |
1 It is not possible to make connection to pin 2 of the SOT404 package
March 1998 |
1 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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PBYR10100B series |
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Schottky barrier |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
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to mounting base |
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Rth j-a |
Thermal resistance junction |
pcb mounted, minimum footprint, FR4 |
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to ambient |
board |
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2 |
K/W |
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50 |
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K/W |
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ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 10 |
A; Tj = 125˚C |
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0.61 |
0.7 |
V |
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IF = 20 |
A; Tj = 125˚C |
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0.74 |
0.85 |
V |
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IF = 20 |
A |
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0.88 |
0.95 |
V |
IR |
Reverse current |
VR = VRWM |
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5 |
150 |
μA |
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Cd |
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VR = VRWM; Tj = 125˚C |
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5 |
15 |
mA |
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Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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420 |
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pF |
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March 1998 |
2 |
Rev 1.100 |
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