Philips PBYR10100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR10100 series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
12
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 60 V/ 80 V/ 100 V
R
= 10 A
F(AV)
VF ≤ 0.7 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
tab
output rectifiersin low voltage, high 1 cathode
frequency switched mode power
supplies. 2 anode
The PBYR10100 series is supplied tab cathode
in the conventional leaded SOD59
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 60 80 100
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 60 80 100 V
voltage
Working peak reverse - 60 80 100 V
voltage
Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 133 ˚C - 10 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 133 ˚C - 20 A
current
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
March 1998 1 Rev 1.200
Thermal resistance junction - - 2 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Philips Semiconductors Product specification
Rectifier diodes PBYR10100 series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 10 A; Tj = 125˚C - 0.61 0.7 V
IF = 20 A; Tj = 125˚C - 0.74 0.85 V
IF = 20 A - 0.88 0.95 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 420 - pF
VR = V
RWM
; Tj = 125˚C - 5 15 mA
RWM
- 5 150 µA
March 1998 2 Rev 1.200
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