Philips PBYL2520CT, PBYL2520CTB, PBYL2525CT, PBYL2525CTB Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYL2525CT, PBYL2525CTB series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package.
The PBYL2525CTB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
= 20 V/ 25 V
R
= 25 A
O(AV)
VF ≤ 0.43 V
PIN DESCRIPTION
tab
tab
1 gate
2 drain
1
3 source
2
tab drain
123
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYL25 20CT 25CT
V
V
V
I
O(AV)
RRM
RWM
R
Peak repetitive reverse - 20 25 V
voltage
Working peak reverse - 20 25 V
voltage
Continuous reverse voltage Tmb ≤ 120 ˚C - 20 25 V
Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 25 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 25 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 135 A
current per diode t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
I
RRM
T
T
j
stg
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
1. It is not possible to make connection to pin 2 of the SOT404 package.
PBYL25 20CTB 25CTB
RRM(max)
March 1998 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes PBYL2525CT, PBYL2525CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction per diode - - 3 K/W
to mounting base both diodes - - 2 K/W
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint, FR4 board
Forward voltage IF = 12.5 A; Tj = 150˚C - 0.36 0.43 V
IF = 12.5 A; Tj = 125˚C - 0.38 0.47 V
IF = 25 A; Tj = 125˚C - 0.5 0.62 V
IF = 25 A - 0.54 0.66 V
Reverse current VR = V
VR = V
RWM
; Tj = 100˚C - 20 30 mA
RWM
-15mA
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 600 - pF
March 1998 2 Rev 1.000
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