Philips Semiconductors Product specification
Rectifier diodes |
|
|
|
|
|
|
|
PBYL2025B series |
|
Schottky barrier |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
FEATURES |
|
SYMBOL |
|
|
|
|
QUICK REFERENCE DATA |
|
|
• Low forward volt drop |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VR = 20 V/ 25 V |
|
|
• Fast switching |
|
|
k |
|
a |
|
|
||
• Reverse surge capability |
|
|
|
|
IF(AV) = 20 A |
|
|||
|
|
||||||||
• High thermal cycling performance |
|
|
|
|
|
|
|
|
|
|
tab |
|
3 |
|
|
||||
|
|
||||||||
• Low thermal resistance |
|
|
|
|
|
|
|
VF ≤ 0.43 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GENERAL DESCRIPTION |
PINNING |
|
|
|
|
SOT404 |
|
Schottky rectifier diodes intended |
|
PIN |
|
DESCRIPTION |
||
for use as output rectifiers in low |
|
|
|
|
|
|
|
|
|
|
|
|
|
voltage, high frequency switched |
1 |
|
|
no connection |
||
mode power supplies. |
2 |
|
|
cathode 1 |
||
The PBYL2025B series is supplied |
|
|
||||
|
|
|
|
|
|
|
in the SOT404 surface mounting |
3 |
|
|
anode |
||
package. |
|
tab |
|
cathode |
||
|
|
|
||||
|
|
|
|
|
|
|
|
tab |
|
2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
|
MAX. |
UNIT |
|
|
|
PBYL20 |
|
20B |
|
25B |
|
VRRM |
Peak repetitive reverse |
|
- |
20 |
|
25 |
V |
|
voltage |
|
|
|
|
|
|
VRWM |
Working peak reverse |
|
- |
20 |
|
25 |
V |
|
voltage |
Tmb ≤ 120 ˚C |
|
|
|
|
|
VR |
Continuous reverse voltage |
- |
20 |
|
25 |
V |
|
IF(AV) |
Average rectified forward |
square wave; δ = 0.5; Tmb ≤ 131 ˚C |
- |
|
20 |
A |
|
|
current |
square wave; δ = 0.5; Tmb ≤ 131 ˚C |
|
|
|
|
|
IFRM |
Repetitive peak forward |
- |
|
40 |
A |
||
|
current |
|
|
|
|
|
|
IFSM |
Non-repetitive peak forward |
t = 10 ms |
- |
|
180 |
A |
|
|
current |
t = 8.3 ms |
- |
|
200 |
A |
|
|
|
sinusoidal; Tj = 125 ˚C prior to |
|
|
|
|
|
IRRM |
|
surge; with reapplied VRRM(max) |
|
|
|
|
|
Peak repetitive reverse |
pulse width and repetition rate |
- |
|
2 |
A |
||
Tj |
surge current |
limited by Tj max |
|
|
|
|
|
Operating junction |
|
- |
|
150 |
˚C |
||
|
temperature |
|
|
|
|
|
|
Tstg |
Storage temperature |
|
- 65 |
|
175 |
˚C |
1. It is not possible to make connection to pin 2 ofthe SOT404 package.
March 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
|
PBYL2025B series |
|
||||
Schottky barrier |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL RESISTANCES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
Rth j-mb |
Thermal resistance junction |
|
|
to mounting base |
|
Rth j-a |
Thermal resistance junction |
pcb mounted, minimum footprint, FR4 |
|
to ambient |
board |
- |
- |
1.5 |
K/W |
- |
50 |
- |
K/W |
|
|
|
|
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
VF |
Forward voltage |
IF = 20 A; Tj = 150˚C |
- |
0.36 |
0.43 |
V |
|
|
|
IF = 20 |
A; Tj = 125˚C |
- |
0.39 |
0.45 |
V |
|
|
IF = 40 |
A; Tj = 125˚C |
- |
0.55 |
0.62 |
V |
|
|
IF = 40 |
A |
- |
0.59 |
0.65 |
V |
IR |
Reverse current |
VR = VRWM |
- |
0.4 |
10 |
mA |
|
Cd |
|
VR = VRWM; Tj = 100˚C |
- |
30 |
60 |
mA |
|
Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
- |
1230 |
- |
pF |
March 1998 |
2 |
Rev 1.000 |