Philips PBYL2020, PBYL2025 Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYL2025 series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
12
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 20 V/ 25 V
R
= 20 A
F(AV)
VF ≤ 0.43 V
Schottky rectifier diodes intended PIN DESCRIPTION
for use as output rectifiers in low
tab
voltage, high frequency switched 1 cathode
mode power supplies.
2 anode
ThePBYL2025seriesis supplied in
the SOD59 (TO220AC) tab cathode
conventional leaded package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 20 25 V
voltage
Working peak reverse - 20 25 V
voltage
Continuous reverse voltage Tmb ≤ 120 ˚C - 20 25 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 131 ˚C - 20 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 131 ˚C - 40 A
current
Non-repetitive peak forward t = 10 ms - 180 A
current t = 8.3 ms - 200 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
Peak repetitive reverse pulse width and repetition rate - 2 A
surge current limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
PBYL20 20 25
RRM(max)
March 1998 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes PBYL2025 series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction - - 1.5 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Forward voltage IF = 20 A; Tj = 150˚C - 0.36 0.43 V
IF = 20 A; Tj = 125˚C - 0.39 0.45 V
IF = 40 A; Tj = 125˚C - 0.55 0.62 V
IF = 40 A - 0.59 0.65 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 1230 - pF
VR = V
RWM
; Tj = 100˚C - 30 60 mA
RWM
- 0.4 10 mA
March 1998 2 Rev 1.000
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