Philips Semiconductors Product specification
Rectifier diodes |
|
|
|
|
|
|
|
PBYL2025 series |
|
Schottky barrier |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
FEATURES |
|
SYMBOL |
|
|
|
|
QUICK REFERENCE DATA |
|
|
• Low forward volt drop |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VR = 20 V/ 25 V |
|
|
• Fast switching |
|
|
k |
|
a |
|
|
||
• Reverse surge capability |
|
|
|
|
IF(AV) = 20 A |
|
|||
|
|
||||||||
• High thermal cycling performance |
|
|
1 |
|
|
2 |
|
|
|
|
|
||||||||
• Low thermal resistance |
|
|
|
|
|
|
|
VF ≤ 0.43 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
GENERAL DESCRIPTION |
PINNING |
|
|
|
|
SOD59 (TO220AC) |
|
||
Schottky rectifier diodes intended |
PIN |
DESCRIPTION |
|||
for use as output rectifiers in low |
|
|
|
||
|
|
|
|||
voltage, |
high frequency switched |
1 |
|
cathode |
|
mode power supplies. |
|
2 |
|
anode |
|
The PBYL2025 series is supplied in |
|
||||
|
|
|
|||
the |
SOD59 |
(TO220AC) |
tab |
cathode |
|
conventional leaded package. |
|
|
|
||
tab
|
|
|
|
|
|
|
1 |
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
LIMITING VALUES |
|
|
|
|
|
|
|
|
||
Limiting values in accordance with the Absolute Maximum System (IEC 134) |
|
|
|
|
|
|
||||
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
MAX. |
|
UNIT |
|||
|
|
|
PBYL20 |
|
|
20 |
|
25 |
|
|
VRRM |
Peak repetitive reverse |
|
|
- |
20 |
|
25 |
V |
||
|
voltage |
|
|
|
|
|
|
|
|
|
VRWM |
Working peak reverse |
|
|
- |
20 |
|
25 |
V |
||
|
voltage |
Tmb ≤ 120 ˚C |
|
|
|
|
|
|
||
VR |
Continuous reverse voltage |
- |
20 |
|
25 |
V |
||||
IF(AV) |
Average rectified forward |
square wave; δ = 0.5; Tmb ≤ 131 ˚C |
- |
20 |
|
A |
||||
|
current |
square wave; δ = 0.5; Tmb ≤ 131 ˚C |
|
|
|
|
|
|
||
IFRM |
Repetitive peak forward |
- |
40 |
|
A |
|||||
|
current |
|
|
|
|
|
|
|
|
|
IFSM |
Non-repetitive peak forward |
t = 10 ms |
- |
180 |
|
A |
||||
|
current |
t = 8.3 ms |
- |
200 |
|
A |
||||
|
|
|
sinusoidal; Tj = 125 ˚C prior to |
|
|
|
|
|
|
|
IRRM |
|
|
surge; with reapplied VRRM(max) |
|
|
|
|
|
|
|
Peak repetitive reverse |
pulse width and repetition rate |
- |
2 |
|
A |
|||||
Tj |
surge current |
limited by Tj max |
|
|
|
|
|
|
||
Operating junction |
|
|
- |
150 |
|
˚C |
||||
|
temperature |
|
|
|
|
|
|
|
|
|
Tstg |
Storage temperature |
|
|
- 65 |
175 |
|
˚C |
|||
March 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
|
PBYL2025 series |
|
||||
Schottky barrier |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL RESISTANCES |
|
|
|
|
|
|
|
|
|
|
|
|
|||
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
Rth j-mb |
Thermal resistance junction |
|
- |
- |
1.5 |
K/W |
|
|
to mounting base |
|
|
|
|
|
|
Rth j-a |
Thermal resistance junction |
in free air |
- |
60 |
- |
K/W |
|
|
to ambient |
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS |
|
|
|
|
|
||
Tj = 25 ˚C unless otherwise specified |
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
VF |
Forward voltage |
IF = 20 A; Tj = 150˚C |
- |
0.36 |
0.43 |
V |
|
|
|
IF = 20 A; Tj = 125˚C |
- |
0.39 |
0.45 |
V |
|
|
|
IF = 40 A; Tj = 125˚C |
- |
0.55 |
0.62 |
V |
|
|
|
IF = 40 A |
- |
0.59 |
0.65 |
V |
|
IR |
Reverse current |
VR = VRWM |
- |
0.4 |
10 |
mA |
|
Cd |
|
VR = VRWM; Tj = 100˚C |
- |
30 |
60 |
mA |
|
Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
- |
1230 |
- |
pF |
|
|
March 1998 |
2 |
Rev 1.000 |
Loading...