Philips PBYL1620B, PBYL1625B Datasheet

Philips Semiconductors Product specification

Rectifier diodes								PBYL1625B series
Schottky barrier
FEATURES		SYMBOL						QUICK REFERENCE DATA
• Low forward volt drop
								VR = 20 V/ 25 V
• Fast switching			k		a
• Reverse surge capability								IF(AV) = 16 A
• High thermal cycling performance
		tab			3
• Low thermal resistance								VF ≤ 0.46 V
GENERAL DESCRIPTION	PINNING							SOT404

Schottky rectifier diodes intended		PIN			DESCRIPTION
for use as output rectifiers in low
voltage, high frequency switched	1				no connection
mode power supplies.	2				cathode 1
The PBYL1625B series is supplied
in the SOT404 surface mounting	3				anode
package.		tab			cathode

	tab
	2
1	3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
		PBYL16		20B		25B
VRRM	Peak repetitive reverse		-	20		25	V
	voltage
VRWM	Working peak reverse		-	20		25	V
	voltage	Tmb ≤ 120 ˚C
VR	Continuous reverse voltage		-	20		25	V
IF(AV)	Average rectified forward	square wave; δ = 0.5; Tmb ≤ 131 ˚C	-		16		A
	current	square wave; δ = 0.5; Tmb ≤ 131 ˚C
IFRM	Repetitive peak forward		-		32		A
	current
IFSM	Non-repetitive peak forward	t = 10 ms	-		135		A
	current	t = 8.3 ms	-		150		A
		sinusoidal; Tj = 125 ˚C prior to
IRRM		surge; with reapplied VRRM(max)
	Peak repetitive reverse	pulse width and repetition rate	-		1		A
Tj	surge current	limited by Tj max
	Operating junction		-		150		˚C
	temperature
Tstg	Storage temperature		- 65		175		˚C

1. It is not possible to make connection to pin 2 ofthe SOT404 package.

October 1998

1

Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes			PBYL1625B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Rth j-mb	Thermal resistance junction
	to mounting base
Rth j-a	Thermal resistance junction	pcb mounted, minimum footprint, FR4
	to ambient	board

-	-	2	K/W
-	50	-	K/W

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
VF	Forward voltage	IF = 16	A; Tj = 125˚C	-	0.42	0.46	V
		IF = 32	A; Tj = 125˚C	-	0.57	0.61	V
IR		IF = 32	A	-	0.55	0.68	V
	Reverse current	VR = VRWM		-	1	5	mA
Cd		VR = VRWM; Tj = 100˚C		-	22	40	mA
	Junction capacitance	VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C		-	700	-	pF

October 1998

2

Rev 1.100