Philips PBSS9110T Technical data

PBSS9110T

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

PBSS9110T

100 V, 1 A

PNP low VCEsat (BISS) transistor

Product specification			2004 May 13
Supersedes data of 2004 May 06

Philips Semiconductors	Product specification

100 V, 1 A

PBSS9110T

PNP low VCEsat (BISS) transistor

FEATURES			QUICK REFERENCE DATA
∙	SOT23 package
			SYMBOL	PARAMETER		MAX.	UNIT
∙ Low collector-emitter saturation voltage VCEsat
			VCEO	collector-emitter voltage		−	V
∙ High collector current capability: IC and ICM						100
			IC	collector current (DC)		−	A
						1
∙ Higher efficiency leading to less heat generation
			ICM	repetitive peak collector		−	A
						3
				current
APPLICATIONS			RCEsat	equivalent on-resistance		320	mΩ
∙	Major application segments		PINNING
	– Automotive 42 V power
	–	Telecom infrastructure		PIN	DESCRIPTION
	–	Industrial
				1	base
∙	DC-to-DC conversion
				2	emitter
∙
	Peripheral drivers			3	collector

–Driver in low supply voltage applications (e.g. lamps and LEDs).

–Inductive load driver (e.g. relays, buzzers and motors).

DESCRIPTION

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T.

MARKING

TYPE NUMBER	MARKING CODE(1)
PBSS9110T	*U7

Note

1.= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

handbook, halfpage				3
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Top view						MAM256

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

	TYPE NUMBER		PACKAGE
		NAME	DESCRIPTION	VERSION
	PBSS9110T	−	plastic surface mounted package; 3 leads	SOT23

2004 May 13

2

Philips Semiconductors	Product specification

100 V, 1 A

PBSS9110T

PNP low VCEsat (BISS) transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−120	V
VCEO	collector-emitter voltage	open base	−	−100	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−1	A
ICM	peak collector current	limited by Tj(max)	−	−3	A
IB	base current (DC)		−	−300	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	300	mW
		Tamb ≤ 25 °C; note 2	−	480	mW
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C
Tstg	storage temperature		−65	+150	°C

Notes

1.Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.

2.Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.

600				001aaa811
Ptot
(mW)
400		(1)
		(2)
200
0
0	40	80	120	160
			Tamb (°C)

(1)1 cm2 collector mounting pad.

(2)Standard footprint.

Fig.2 Power derating curves.

2004 May 13

3

Philips Semiconductors	Product specification

100 V, 1 A

PBSS9110T

PNP low VCEsat (BISS) transistor

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth(j-a)	thermal resistance from junction to	in free air; note 1	417	K/W
	ambient	in free air; note 2	260	K/W

Notes

1.Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2.Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.

103									001aaa814
Zth	(1)
(K/W)
	(2)
102	(3)
	(4)
	(5)
	(6)
	(7)
10	(8)
	(9)
1	(10)
10−1		10−4	10−3	10−2	10−1			102	103
10−5						1	10
									tp (s)

Mounted on printed-circuit board; 1 cm2 collector mounting pad.

(1)	δ = 1.	(3)	δ = 0.5.	(5)	δ = 0.2.	(7)	δ = 0.05.	(9)	δ = 0.01.
(2)	δ = 0.75.	(4)	δ = 0.33.	(6)	δ = 0.1.	(8)	δ = 0.02.	(10)	δ = 0.

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

2004 May 13

4