Philips PBSS8110Z Technical data
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PBSS8110Z
100 V, 1 A NPN low V
Rev. 01 — 26 April 2004 Product data sheet
1. Product profile
1.1 General description
NPN low V
1.2 Features
■ SOT223 package
■ Low collector-emitter saturation voltage V
■ High collector current capability IC and I
■ High efficiency, leading to less heat generation.
1.3 Applications
■ Major application segments:
■ DC-to-DC converter
■ Peripheral driver
(BISS) transistor
CEsat
transistor in a plastic SOT223 (SC-73) package.
CEsat
CEsat
CM
◆ Automotive 42 V power
◆ Telecom infrastructure
◆ Industrial.
◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
◆ Inductive load drivers (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
C
I
CM
R
CEO
CEsat
collector-emitter voltage - - 100 V
collector current (DC) - - 1 A
peak collector current - - 3 A
equivalent on-resistance - - 200 mΩ
Philips Semiconductors
PBSS8110Z
2. Pinning information
Table 2: Discrete pinning
Pin Description Simplified outline Symbol
1 base
2, 4 collector
3 emitter
3. Ordering information
Table 3: Ordering information
Type number Package
PBSS8110Z - plastic surface mounted package; collector pad for good
100 V, 1 A NPN low V
4
123
Top view
Name Description Version
heat transfer; 4 leads
(BISS) transistor
CEsat
1
sym016
2, 4
3
SOT223
4. Marking
Table 4: Marking
Type number Marking code
PBSS8110Z PB8110
[1] Made in Hong Kong.
[1]
9397 750 12568 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 April 2004 2 of 12
Philips Semiconductors
PBSS8110Z
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
T
amb
T
stg
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting
pad.
100 V, 1 A NPN low V
(BISS) transistor
CEsat
collector-base voltage open emitter - 120 V
collector-emitter voltage open base - 100 V
emitter-base voltage open collector - 5 V
peak collector current T
j(max)
-3A
collector current (DC) - 1 A
base current (DC) - 0.3 A
total power dissipation T
amb
≤ 25 °C
[1]
- 650 mW
[2]
- 1000 mW
[3]
- 1.4 W
junction temperature - 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
1.6
P
tot
(W)
1.2
0.8
0.4
0
0 16012040 80
(1) FR4 PCB; 6 cm2 collector mounting pad.
(2) FR4 PCB; 1 cm2 collector mounting pad.
(3) FR4 PCB; standard footprint.
Fig 1. Power derating curves.
001aaa508
(1)
(2)
(3)
T
(°C)
amb
9397 750 12568 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 April 2004 3 of 12
Philips Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
(BISS) transistor
CEsat
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance
in free air
from junction to
ambient
R
th(j-s)
thermal resistance
in free air
from junction to
soldering point
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad.
3
10
Z
th
(K/W)
2
10
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
[1]
[2]
[3]
[1]
192 K/W
125 K/W
89 K/W
17 K/W
001aaa713
−1
10
−5
10
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (S)
3
10
Mounted on FR4 PCB; standard footprint.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
9397 750 12568 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 April 2004 4 of 12
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