Philips PBSS8110X Technical data
查询PBSS8110X-1供应商
PBSS8110X
100 V, 1 A NPN low V
Rev. 01 — 11 May 2005 Product data sheet
1. Product profile
1.1 General description
NPN low V
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
■ SOT89 package
■ Low collector-emitter saturation voltage V
■ High collector current capability: IC and I
■ High efficiency leading to less heat generation
1.3 Applications
(BISS) transistor
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
CEsat
CEsat
CM
■ Major application segments:
◆ Automotive 42 V power
◆ Telecom infrastructure
◆ Industrial
■ Peripheral driver:
◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
◆ Inductive load driver (e.g. relays, buzzers and motors)
■ DC-to-DC converter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
R
CEsat
[1] Pulse test: tp≤ 300 µs; δ≤ 0.02.
collector-emitter voltage open base - - 100 V
collector current (DC) - - 1 A
peak collector current single pulse;
t
≤ 1ms
p
collector-emitter
saturation resistance
IC=1A;
I
= 100 mA
B
--3 A
[1]
- 165 200 mΩ
Philips Semiconductors
PBSS8110X
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 emitter
2 collector
3 base
3. Ordering information
Table 3: Ordering information
Type number Package
PBSS8110X SC-62 plastic surface mounted package; collector pad for
100 V, 1 A NPN low V
321
Name Description Version
good heat transfer; 3 leads
(BISS) transistor
CEsat
3
sym042
2
1
SOT89
4. Marking
Table 4: Marking codes
Type number Marking code
PBSS8110X *4B
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
9397 750 14956 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 2 of 15
Philips Semiconductors
PBSS8110X
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
100 V, 1 A NPN low V
(BISS) transistor
CEsat
collector-base voltage open emitter - 120 V
collector-emitter voltage open base - 100 V
emitter-base voltage open collector - 5 V
collector current (DC) - 1 A
peak collector current single pulse;
t
≤ 1ms
p
-3A
base current (DC) - 300 mA
total power dissipation T
amb
≤ 25 °C
[1]
- 0.55 W
[2]
- 1.4 W
[3]
- 2.0 W
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
2.0
(1)
P
tot
(W)
1.6
(2)
1.2
0.8
(3)
0.4
0
0 16012040 80
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB; mounting pad for collector 6 cm
(3) FR4 PCB; standard footprint
Fig 1. Power derating curves
006aaa408
T
(°C)
amb
2
9397 750 14956 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 3 of 15
Philips Semiconductors
PBSS8110X
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Z
th(j-a)
(K/W)
3
10
2
10
10
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
R
th(j-a)
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
100 V, 1 A NPN low V
in free air
(BISS) transistor
CEsat
[1]
- - 227 K/W
[2]
--89K/W
[3]
--63K/W
--16K/W
006aaa409
−1
10
−5
10
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (s)
3
10
FR4 PCB; standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14956 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 4 of 15
Philips Semiconductors
PBSS8110X
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
10
1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
10
−4
10
10
FR4 PCB; mounting pad for collector 6 cm
100 V, 1 A NPN low V
−3
−2
2
−1
10
1
1010
(BISS) transistor
CEsat
006aaa411
2
10
tp (s)
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
10
Z
th(j-a)
(K/W)
2
duty cycle =
10
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa410
3
10
−1
10
−5
10
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (s)
3
10
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14956 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 5 of 15
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