Philips PBSS8110S Technical data
查询PBSS8110S供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PBSS8110S
100 V, 1 A
NPN low V
Product specification
Supersedes data of 2003 Nov 11
CEsat
(BISS) transistor
2004 Aug 13
Philips Semiconductors Product specification
100 V, 1 A
NPN low V
CEsat
FEATURES
• SOT54 package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation.
APPLICATIONS
• Automotive 42 V power
• Telecom infrastructure
• General industrial applications
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Generic driver (e.g. lamps and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
NPN low V
BISS transistor in a SOT54 plastic
CEsat
package.
(BISS) transistor
CEsat
CM
PBSS8110S
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
collector-emitter voltage 100 V
collector current (DC) 1 A
peak collector current 3 A
equivalent on-resistance 200 mΩ
1 base
2 collector
3 emitter
1
2
3
MAM259
2
1
3
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SOT54) and symbol.
PBSS8110S S8110S
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS8110S − plastic single-ended leaded(through hole) package; 3 leads SOT54
2004 Aug 13 2
Philips Semiconductors Product specification
100 V, 1 A
PBSS8110S
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 100 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current T
base current (DC) − 300 mA
total power dissipation T
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
(BISS) transistor
CEsat
j max
≤ 25 °C; note 1 − 830 mW
amb
− 3A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 150 K/W
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2004 Aug 13 3
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