Philips PBSS8110D Technical data

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PBSS8110D

100 V, 1 A NPN low V

Rev. 01 — 23 April 2004 Product data sheet

1. Product profile

1.1 General description

NPN low V

1.2 Features

■ SOT457 package

■ Low collector-emitter saturation voltage V

■ High collector current capability IC and I

■ High efficiency, leading to less heat generation.

1.3 Applications

■ Major application segments:

■ DC-to-DC converter

■ Peripheral driver

(BISS) transistor

CEsat

transistor in a plastic SOT457 (SC-74) package.

CEsat

CEsat

CM

◆ Automotive 42 V power

◆ Telecom infrastructure

◆ Industrial.

◆ Driver in low supply voltage applications (e.g. lamps and LEDs)

◆ Inductive load drivers (e.g. relays, buzzers and motors).

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
I

C

I

CM

R

CEO

CEsat

collector-emitter voltage - - 100 V
collector current (DC) - - 1 A
peak collector current - - 3 A
equivalent on-resistance - - 200 mΩ

Philips Semiconductors

PBSS8110D

2. Pinning information

Table 2: Discrete pinning

Pin Description Simplified outline Symbol

1, 2, 5, 6 collector
3 base
4 emitter

3. Ordering information

Table 3: Ordering information

Type number Package

PBSS8110D - plastic surface mounted package; 6 leads SOT457

100 V, 1 A NPN low V

132

Top view

Name Description Version

(BISS) transistor

CEsat

456

3

1, 2, 5, 6

4

sym014

4. Marking

Table 4: Marking

Type number Marking code

PBSS8110D A8

[1] Made in Malaysia.

[1]

9397 750 12566 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 April 2004 2 of 12

Philips Semiconductors

PBSS8110D

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

T

amb

T

stg

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting

pad.

[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting

pad.

100 V, 1 A NPN low V

(BISS) transistor

CEsat

collector-base voltage open emitter - 120 V
collector-emitter voltage open base - 100 V
emitter-base voltage open collector - 5 V
peak collector current T

j(max)

-3A
continuous collector current - 1 A
continuous base current - 0.3 A
total power dissipation T

amb

≤ 25 °C

[1]

- 300 mW

[2]

- 550 mW

[3]

- 700 mW
junction temperature - 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C

800

P

tot

(mW)

600

400

200

0

0 16012040 80

(1) FR4 PCB; 6 cm2 collector mounting pad.
(2) FR4 PCB; 1 cm2 collector mounting pad.
(3) FR4 PCB; standard footprint.

Fig 1. Power derating curves.

001aaa493

(1)

(2)

(3)

T

(°C)

amb

9397 750 12566 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 April 2004 3 of 12

Philips Semiconductors

PBSS8110D

100 V, 1 A NPN low V

(BISS) transistor

CEsat

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

R

th(j-a)

th(j-s)

thermal resistance from junction to ambient in free air

thermal resistance from junction to

in free air

soldering point

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad.

3

10

Z

th

(1)
(2)

(K/W)

(3)
(4)

2

10

(5)
(6)

(7)

(8)

10

(9)

[1]

416 K/W

[2]

227 K/W

[3]

178 K/W

[1]

83 K/W

001aaa494

(10)

1

−1

10

−5

10

−4

10

−3

10

−2

−1

10

1

Mounted on FR4 PCB; standard footprint.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.

(10) δ =0.

Fig 2. Transient thermal impedance as a function of pulse time; typical values.

1010

2

10

tp (s)

3

10

9397 750 12566 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 April 2004 4 of 12