Philips pbss5540z DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PBSS5540Z
PNP Transistor
Product specification
Supersedes data of 1999 Aug 04
2000 Oct 25
Philips Semiconductors Product specification
PNP Transistor PBSS5540Z
FEATURES
• Low V
CEsat
• High current capabilities.
APPLICATIONS
• Heavy duty battery powered equipment (automotive,
telecom and audio video) such as motor and lamp
drivers
• V
critical applications such as latest low supply
CEsat
voltage IC applications
• All battery driven equipment to save battery power.
DESCRIPTION
PNP low V
transistor in a plastic SOT223 package.
CEsat
NPN complement: PBSS4540Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS5540Z PB5540
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
123
Top view
4
1
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
2, 4
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−5A
peak collector current −−10 A
peak base current −−2A
total power dissipation up to T
up to T
=25°C; notes 1 and 3 − 1.35 W
amb
=25°C; notes 2 and 3 − 2W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm.
3. For other mounting conditions see
Handbook”
.
“Thermal considerations for SOT223 in the General Part of associated
2000 Oct 25 2
Philips Semiconductors Product specification
PNP Transistor PBSS5540Z
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mountedon a printed circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. For other
mounting conditions see
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
C
c
thermal resistance from junction to ambient in free air; note 1 92 K/W
“Thermal considerations for SOT223 in the General Part of associated Handbook”
collector-base cut-off
current
VCB= 30 V; IE=0 −−−100 nA
V
= 30 V; IE= 0; Tj= 150 °C −−−50 µA
CB
.
emitter-base cut-off current VEB=5V; IC=0 −−−100 nA
DC current gain VCE= −2V;
I
=−500 mA 250 350 −
C
= −1 A; note 1 200 300 −
I
C
I
= −2 A; note 1 150 250 −
C
I
= −5 A; note 1 50 150 −
C
saturation voltage IC= −500 mA; IB= −5mA −−80 −120 mV
I
= −1 A; IB= −10 mA −−120 −170 mV
C
I
= −2 A; IB= −200 mA −−110 −160 mV
C
I
= −5 A; IB= −500 mA −−250 −375 mV
C
saturation voltage IC= −5 A; IB= −500 mA −−−1.3 V
base-emitter turn on voltage VCE= −2 V; IC= −2A −−0.8 −1.25 V
transition frequency IC= −100 mA; VCE= −10 V;
60 120 − MHz
f = 100 MHz
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz − 90 105 pF
Note
1. Pulsed conditions t
≤ 300 µs; δ≤0.02.
p
2000 Oct 25 3
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