Philips PBSS5540X Technical data
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M3D109
PBSS5540X
40 V, 5 A
PNP low V
Product specification
Supersedes data of 2004 Jan 15
CEsat
(BISS) transistor
2004 Nov 04
Philips Semiconductors Product specification
40 V, 5 A
PNP low V
CEsat
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• High efficiency leading to less heat generation.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Medium power driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low V
transistor in a medium power SOT89
CEsat
(SC-62) package.
NPN complement: PBSS4540X.
(BISS) transistor
CEsat
CM
PBSS5540X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage −40 V
collector current (DC) −4A
repetitive peak collector
−5A
current
equivalent
75 mΩ
on-resistance
MARKING
TYPE NUMBER MARKING CODE
(1)
PBSS5540X *1G
Note
1. * = p: Made in Hong Kong.
321
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS5540X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
3
1
sym079
SOT89
2004 Nov 04 2
Philips Semiconductors Product specification
40 V, 5 A
PBSS5540X
PNP low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
CM
I
CRP
I
C
I
BM
I
B
P
T
T
T
CBO
CEO
EBO
tot
stg
j
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
peak collector current tp≤ 1ms −−10 A
repetitive peak collector current tp≤ 10 ms; δ≤0.2 −−5A
collector current (DC) −−4A
peak base current tp≤ 1ms −−2A
base current (DC) −−1A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C
amb
tp≤ 10 ms; δ≤0.2; note 1 − 2.5 W
note 1 − 0.55 W
note 2 − 1W
note 3 − 1.4 W
note 4 − 1.6 W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
2004 Nov 04 3
Philips Semiconductors Product specification
40 V, 5 A
PNP low V
1600
P
tot
(mW)
1200
800
400
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
(1)
(2)
(3)
0
−50 20015050 1000
(BISS) transistor
CEsat
001aaa229
T
(°C)
amb
PBSS5540X
Fig.2 Power derating curves.
2004 Nov 04 4
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