Philips PBSS5540X Technical data

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M3D109

PBSS5540X

40 V, 5 A PNP low V

Product speciﬁcation Supersedes data of 2004 Jan 15

CEsat

(BISS) transistor

2004 Nov 04

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability: IC and I

• High efficiency leading to less heat generation.

APPLICATIONS

• Supply line switching circuits

• Battery management applications

• DC/DC converter applications

• Strobe flash units

• Medium power driver (e.g. relays, buzzers and motors).

DESCRIPTION

PNP low V

transistor in a medium power SOT89

CEsat

(SC-62) package. NPN complement: PBSS4540X.

(BISS) transistor

CEsat

PBSS5540X

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

CEO

CRP

CEsat

PINNING

PIN DESCRIPTION

1 emitter 2 collector 3 base

collector-emitter voltage −40 V collector current (DC) −4A repetitive peak collector

−5A

current equivalent

75 mΩ

on-resistance

MARKING

TYPE NUMBER MARKING CODE

(1)

PBSS5540X *1G

Note

1. * = p: Made in Hong Kong.

321

* = t: Made in Malaysia. * = W: Made in China.

Fig.1 Simplified outline (SOT89) and symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS5540X SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads

sym079

SOT89

2004 Nov 04 2

Philips Semiconductors Product speciﬁcation

40 V, 5 A

PBSS5540X

PNP low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V V I

CRP

T T T

CBO CEO EBO

tot

stg j amb

collector-base voltage open emitter −−40 V collector-emitter voltage open base −−40 V emitter-base voltage open collector −−6V peak collector current tp≤ 1ms −−10 A repetitive peak collector current tp≤ 10 ms; δ≤0.2 −−5A collector current (DC) −−4A peak base current tp≤ 1ms −−2A base current (DC) −−1A total power dissipation T

storage temperature −65 +150 °C junction temperature − 150 °C ambient temperature −65 +150 °C

(BISS) transistor

CEsat

≤ 25 °C

amb

tp≤ 10 ms; δ≤0.2; note 1 − 2.5 W note 1 − 0.55 W note 2 − 1W note 3 − 1.4 W note 4 − 1.6 W

Notes

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.

2004 Nov 04 3

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

1600

tot

(mW)

1200

800

400

(1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint.

(1)

(2)

(3)

−50 20015050 1000

(BISS) transistor

CEsat

001aaa229

(°C)

amb

PBSS5540X

Fig.2 Power derating curves.

2004 Nov 04 4

Philips Semiconductors Product speciﬁcation

40 V, 5 A

PBSS5540X

PNP low V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th(j-a)

th(j-s)

Notes

1. Pulse test: tp≤ 10 ms; δ≤0.2.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.

4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.

thermal resistance from junction to ambient

thermal resistance from junction to soldering point

(BISS) transistor

CEsat

in free air

notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W

16 K/W

(K/W)

−1

−5

Mounted on FR4 printed-circuit board; standard footprint.

(1) δ =1. (2) δ = 0.75.

(1) (2)

(3) (4) (5)

(6) (7) (8) (9)

(10)

−4

(3) δ = 0.5. (4) δ = 0.33.

−3

(5) δ = 0.2. (6) δ = 0.1.

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

−2

−1

(7) δ = 0.05. (8) δ = 0.02.

(9) δ = 0.01. (10) δ =0.

006aaa232

1010

tp (s)

2004 Nov 04 5

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

(K/W)

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

(1)

(2)

(3)

(4)

(5) (6)

(7) (8)

(9)

(10)

−1

−5

(BISS) transistor

CEsat

−4

−3

−2

PBSS5540X

006aaa233

−1

1010

tp (s)

(1) δ =1. (2) δ = 0.75.

(K/W)

−1

−5

(1)

(3) (5)

(6) (7)

(8) (9)

(10)

(3) δ = 0.5. (4) δ = 0.33.

(5) δ = 0.2. (6) δ = 0.1.

(7) δ = 0.05. (8) δ = 0.02.

(9) δ = 0.01. (10) δ =0.

Fig.4 Transient thermal impedance as a function of pulse time; typical values.

(2) (4)

−4

−3

−2

−1

1010

006aaa234

tp (s)

Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.

(1) δ =1. (2) δ = 0.75.

(3) δ = 0.5. (4) δ = 0.33.

(5) δ = 0.2. (6) δ = 0.1.

(7) δ = 0.05. (8) δ = 0.02.

Fig.5 Transient thermal impedance as a function of pulse time; typical values.

2004 Nov 04 6

(9) δ = 0.01. (10) δ =0.

Philips Semiconductors Product speciﬁcation

40 V, 5 A

PBSS5540X

PNP low V

CHARACTERISTICS

=25°C unless otherwise speciﬁed.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO

EBO

V f

CEsat

BEsat

BEon

collector-base cut-off current VCB= −30 V; IE=0A −−−100 nA

emitter-base cut-off current VEB= −5 V; IC=0A −−−100 nA DC current gain VCE= −2 V; IC= −0.5 A 250 −−

collector-emitter saturation voltage

equivalent on-resistance IC= −5 A; IB= −500 mA;

base-emitter saturation voltage

base-emitter turn-on voltage VCE= −2 V; IC= −2A −−−1.0 V transition frequency VCE= −10 V; IC= −0.1 A;

collector capacitance VCB= −10 V; IE= ie=0A;

(BISS) transistor

CEsat

= −30 V; IE=0A;

= 150 °C

VCE= −2 V; IC= −1A;

−−−50 µA

200 −−

note 1 VCE= −2 V; IC= −2A;

150 −−

note 1 VCE= −2 V; IC= −5A;

50 −−

note 1 IC= −0.5 A; IB= −5mA −−120 mV IC= −1 A; IB= −10 mA −−170 mV IC= −2 A; IB= −200 mA −−160 mV IC= −4 A; IB= −200 mA;

−−340 mV

note 1 IC= −5 A; IB= −500 mA;

−−375 mV

note 1

− 45 75 mΩ

note 1 IC= −4 A; IB= −200 mA;

−−−1.1 V

note 1 IC= −5 A; IB= −500 mA;

−−−1.2 V

note 1

60 −−MHz

f = 100 MHz

−−105 pF

f = 1 MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

2004 Nov 04 7

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

−8

(A)

−6

−4

−2

0 −2−1.5−0.5 −1

(1) IB1= −11 mA. (2) IB2= −22 mA. (3) IB3= −33 mA.

(BISS) transistor

CEsat

(1) (2)

(3)

(4)

(5)

(4) IB4= −44 mA. (5) IB5= −55 mA.

001aaa157

(V)

−1.2

(V)

−0.8

−0.4

(1) T

−1

−10

= −2V.

= −55 °C. (2) T

amb

−1 −10

−10

=25°C. (3) T

amb

PBSS5540X

001aaa158

(1)

(2)

(3)

−10

(mA)

amb

−10

= 100 °C.

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

1000

800

600

400

200

−1

−10

VCE= −2V. (1) T

amb

−1 −10

−10

= 100 °C. (2) T

(1)

(2)

(3)

=25°C. (3) T

amb

001aaa159

−10

(mA)

amb

−10

= −55 °C.

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

001aaa160

(1)

(3)

−10

IC (mA)

amb

CEsat

(Ω)

C/IB

(1) T

−1

−2

−1

−10

= 20.

= 100 °C. (2) T

amb

(2)

−1 −10

−10

=25°C. (3) T

amb

−10

= −55 °C.

Fig.8 DC current gain as a function of collector

current; typical values.

2004 Nov 04 8

Fig.9 Equivalent on-resistance as a function of

collector current; typical values.

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

−1

CEsat

(V)

−1

−10

−2

−10

−3

−10

−1

−10

IC/IB= 20. (1) T

amb

−1 −10

= 100 °C. (2) T

(BISS) transistor

CEsat

(2)

−10

amb

(3)

=25°C. (3) T

(1)

001aaa161

−10 IC (mA)

amb

−10

= −55 °C.

PBSS5540X

−1

CEsat

(V)

−1

−10

(1) (2)

(3)

−10

amb

−2

−3

−1

−10

=25°C.

−1 −10

(1) IC/IB= 100. (2) IC/IB= 50. (3) IC/IB= 10.

001aaa162

−10

IC (mA)

−10

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

−10

BEsat

(V)

−1

−10

IC/IB= 20. (1) T

amb

(1) (2)

(3)

−1

−1 −10

= −55 °C. (2) T

−10

=25°C. (3) T

amb

001aaa163

amb

−10

= 100 °C.

−10

IC (mA)

Fig.11 Collector-emitter saturation voltage as a

function of collector current; typical values.

001aaa164

(mA)

−10

amb

(V)

−1.2

−0.8

−0.4

−1

−10

=25°C.

−1 −10

−10

Fig.12 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Nov 04 9

Fig.13 Base-emitter voltage as a function of

collector current; typical values.

Philips Semiconductors Product speciﬁcation

40 V, 5 A PNP low V

Reference mounting conditions

2.5 mm

0.5 mm

3.96 mm

(BISS) transistor

CEsat

32 mm

2.5 mm 1 mm

3 mm

1 mm

1.6 mm

001aaa234

5 mm

handbook, halfpage

40 mm

2.5 mm

0.5 mm

3.96 mm

PBSS5540X

32 mm

10 mm

1 mm

5 mm

1.6 mm

MLE322

Fig.14 FR4, standard footprint.

32 mm 30 mm

2.5 mm

0.5 mm

3.96 mm

1 mm

001aaa235

Fig.15 FR4, mounting pad for collector 1 cm2.

5 mm

1.6 mm

Fig.16 FR4, mounting pad for collector 6 cm2.

2004 Nov 04 10

Philips Semiconductors Product speciﬁcation

40 V, 5 A

PBSS5540X

PNP low V

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

(BISS) transistor

CEsat

123

w M

DIMENSIONS (mm are the original dimensions)

UNIT

1.6

1.4

0.48

0.35

0.53

0.40

1.8

1.4

0.44

0.23

0 2 4 mm

scale

4.6

2.6

3.0

4.4

2.4

1.5

4.25

3.75

1.2

0.8

0.13

OUTLINE VERSION

SOT89 TO-243 SC-62

IEC JEDEC JEITA

REFERENCES

2004 Nov 04 11

EUROPEAN

PROJECTION

ISSUE DATE

99-09-13 04-08-03

Philips Semiconductors Product speciﬁcation

40 V, 5 A

PBSS5540X

PNP low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multipletype numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

DEFINITION

DEFINITIONS Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device attheseor at any otherconditionsabovethose given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationorwarranty that such applications will be suitable for the specified use without further testing or modification.

DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductorscustomersusingorselling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. Whenthe product is in fullproduction (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2004 Nov 04 12

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 04 Document order number: 9397750 13893

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