Philips PBSS5540X Technical data
PBSS5540X
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5540X
40 V, 5 A
PNP low VCEsat (BISS) transistor
Product specification |
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2004 Nov 04 |
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Supersedes data of 2004 Jan 15 |
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Philips Semiconductors |
Product specification |
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40 V, 5 A
PBSS5540X
PNP low VCEsat (BISS) transistor
FEATURES
∙Low collector-emitter saturation voltage VCEsat
∙High collector current capability: IC and ICM
∙High efficiency leading to less heat generation.
APPLICATIONS
∙Supply line switching circuits
∙Battery management applications
∙DC/DC converter applications
∙Strobe flash units
∙Medium power driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a medium power SOT89 (SC-62) package.
NPN complement: PBSS4540X.
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PBSS5540X |
*1G |
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Note
1.* = p: Made in Hong Kong.
*= t: Made in Malaysia.
*= W: Made in China.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
−40 |
V |
IC |
collector current (DC) |
−4 |
A |
ICRP |
repetitive peak collector |
−5 |
A |
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current |
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RCEsat |
equivalent |
75 |
mΩ |
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on-resistance |
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PINNING |
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PIN |
DESCRIPTION |
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1emitter
2collector
3base
2
3
1
sym079
3 |
2 |
1 |
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PBSS5540X |
SC-62 |
plastic surface mounted package; collector pad for good heat |
SOT89 |
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transfer; 3 leads |
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2004 Nov 04 |
2 |
Philips Semiconductors |
Product specification |
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40 V, 5 A
PBSS5540X
PNP low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
−40 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
−40 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
−6 |
V |
ICM |
peak collector current |
tp ≤ 1 ms |
− |
−10 |
A |
ICRP |
repetitive peak collector current |
tp ≤ 10 ms; δ ≤ 0.2 |
− |
−5 |
A |
IC |
collector current (DC) |
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− |
−4 |
A |
IBM |
peak base current |
tp ≤ 1 ms |
− |
−2 |
A |
IB |
base current (DC) |
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− |
−1 |
A |
Ptot |
total power dissipation |
Tamb ≤ 25 °C |
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tp ≤ 10 ms; δ ≤ 0.2; note 1 |
− |
2.5 |
W |
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note 1 |
− |
0.55 |
W |
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note 2 |
− |
1 |
W |
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note 3 |
− |
1.4 |
W |
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note 4 |
− |
1.6 |
W |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
ambient temperature |
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−65 |
+150 |
°C |
Notes
1.Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2.Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3.Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
4.Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
2004 Nov 04 |
3 |
Philips Semiconductors |
Product specification |
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40 V, 5 A
PBSS5540X
PNP low VCEsat (BISS) transistor
1600 |
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001aaa229 |
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Ptot |
(1) |
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(mW) |
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1200 |
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(2) |
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800 |
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(3) |
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400 |
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0 |
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−50 |
0 |
50 |
100 |
150 |
200 |
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Tamb (°C) |
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(1)FR4 PCB; 6 cm2 mounting pad for collector.
(2)FR4 PCB; 1 cm2 mounting pad for collector.
(3)FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 04 |
4 |
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