Philips PBSS5480X Technical data
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M3D109
PBSS5480X
80 V, 4 A
PNP low V
Product specification
Supersedes data of 2004 Jun 8
CEsat
(BISS) transistor
2004 Nov 08
Philips Semiconductors Product specification
80 V, 4 A
PNP low V
CEsat
FEATURES
• High hFE and low V
• High collector current IC: 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers(e.g.fans and motors)
• Strobe flash units for digital still cameras and mobile
phones
• Inverter applications (e.g. TFT displays)
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
PNP low V
(BISS) transistor in a SOT89 (SC-62)
CEsat
plastic package.
NPN complement: PBSS4480X.
(BISS) transistor
at high current operation
CEsat
PBSS5480X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage −80 V
collector current (DC) −4A
peak collector current −10 A
equivalent on-resistance 75 mΩ
2
MARKING
TYPE NUMBER MARKING CODE
PBSS5480X *1Z
(1)
321
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS5480X SC-62 plastic surface mounted package; collector pad for
good heat transfer; 3 leads
3
1
sym079
SOT89
2004 Nov 08 2
Philips Semiconductors Product specification
80 V, 4 A
PBSS5480X
PNP low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
CRP
I
B
I
BM
P
T
T
T
CBO
CEO
EBO
tot
stg
j
amb
collector-base voltage open emitter −−80 V
collector-emitter voltage open base −−80 V
emitter-base voltage open collector −−5V
collector current (DC) note 1 −−4A
peak collector current tp≤ 1 ms or limited by T
repetitive peak collector current tp≤ 10 ms; δ≤0.1 −−6A
base current (DC) −−1A
peak base current tp≤ 1ms −−2A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
(BISS) transistor
CEsat
−−10 A
amb
j(max)
≤ 25 °C
notes 2 and 3 − 2.5 W
note 3 − 0.55 W
note 4 − 1W
note 1 − 1.4 W
note 5 − 1.6 W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.1.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
2004 Nov 08 3
Philips Semiconductors Product specification
80 V, 4 A
PNP low V
1600
P
tot
(mW)
1200
800
400
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
(1)
(2)
(3)
0
−50 20015050 1000
(BISS) transistor
CEsat
001aaa229
T
(°C)
amb
PBSS5480X
Fig.2 Power derating curves.
2004 Nov 08 4
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