Philips PBSS5350Z Technical data

PBSS5350Z

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage

M3D087

PBSS5350Z

50 V low VCEsat PNP transistor

Product specification			2003 May 13
Supersedes data of 2003 Jan 20

Philips Semiconductors	Product specification
50 V low VCEsat PNP transistor	PBSS5350Z

FEATURES

∙Low collector-emitter saturation voltage

∙High collector current capability: IC and ICM

∙High collector current gain (hFE) at high IC

∙Higher efficiency leading to less heat generation

∙Reduced PCB area requirements compared to DPAK.

APPLICATIONS

∙Power management

–DC/DC converters

–Supply line switching

–Battery charger

–Linear voltage regulation (LDO).

∙Peripheral drivers

–Driver in low supply voltage applications, e.g. lamps, LEDs

–Inductive load driver, e.g. relays, buzzers, motors.

DESCRIPTION

PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z.

MARKING

TYPE NUMBER	MARKING CODE
PBSS5350Z	PB5350

QUICK REFERENCE DATA

SYMBOL	PARAMETER	MAX.	UNIT
VCEO	collector-emitter voltage	−50	V
IC	collector current (DC)	−3	A
ICM	peak collector current	−5	A
RCEsat	equivalent on-resistance	<150	mΩ
PINNING
PIN	DESCRIPTION
1	base
2	collector
3	emitter
4	collector

handbook, halfpage						4
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Top view								MAM288

Fig.1 Simplified outline (SOT223) and symbol.

2003 May 13

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Philips Semiconductors				Product specification
50 V low VCEsat PNP transistor				PBSS5350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−60	V
VCEO	collector-emitter voltage	open base	−	−50	V
VEBO	emitter-base voltage	open collector	−	−6	V
IC	collector current (DC)		−	−3	A
ICM	peak collector current		−	−5	A
IBM	peak base current		−	−1	A
Ptot	total power dissipation	Tamb ≤ 25 °C; notes 1 and 3	−	1.35	W
		Tamb ≤ 25 °C; notes 2 and 3	−	2	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Notes

1.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

2.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3.For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	in free air; notes 1 and 3	92	K/W
		in free air; notes 2 and 3	62.5	K/W

Notes

1.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.

2.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3.For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

2003 May 13

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Philips Semiconductors				Product specification
50 V low VCEsat PNP transistor				PBSS5350Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector-base cut-off current	VCB = −50 V; IE = 0	−	−	−100	nA
		VCB = −50 V; IE = 0; Tj = 150 °C	−	−	−50	μA
IEBO	emitter-base cut-off current	VEB = −5 V; IC = 0	−	−	−100	nA
hFE	DC current gain	VCE = −2 V;
		IC = −500 mA	200	−	−
		IC = −1 A; note 1	200	−	−
		IC = −2 A; note 1	100	−	−
VCEsat	collector-emitter saturation	IC = −500 mA; IB = −50 mA	−	−	−100	mV
	voltage	IC = −1 A; IB = −50 mA	−	−	−180	mV
		IC = −2 A; IB = −200 mA; note 1	−	−	−300	mV
RCEsat	equivalent on-resistance	IC = −2 A; IB = −200 mA; note 1	−	120	<150	mΩ
VBEsat	base-emitter saturation	IC = −2 A; IB = −200 mA; note 1	−	−	−1.2	V
	voltage
VBEon	base-emitter turn-on voltage	VCE = −2 V; IC = −1 A; note 1	−	−	−1.1	V
fT	transition frequency	IC = −100 mA; VCE = −5 V;	100	−	−	MHz
		f = 100 MHz
Cc	collector capacitance	VCB = −10 V; IE = Ie = 0; f = 1 MHz	−	−	40	pF

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2003 May 13

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