Philips PBSS5350T Technical data

查询PBSS5350T供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

PBSS5350T

50 V, 3 A
PNP low V

Product specification
Supersedes data of 2002 Aug 08

CEsat

(BISS) transistor

2004 Jan 13

Philips Semiconductors Product specification

50 V, 3 A
PNP low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V
corresponding low R

• High collector current capability

• High collector current gain

• Improved efficiency due to reduced heat generation.

APPLICATIONS

• Power management applications

• Low and medium power DC/DC convertors

• Supply line switching

• Battery chargers

• Linear voltage regulation with low voltage drop-out

(LDO).

DESCRIPTION

PNP low V

transistor in a SOT23 plastic package.

CEsat

NPN complement: PBSS4350T.

(BISS) transistor

CEsat

CEsat

and

PBSS5350T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CRP

R

CEsat

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

collector-emitter voltage −50 V
collector current (DC) −2A
repetitive peak collector

−3A

current
equivalent on-resistance 135 mΩ

3

3

MARKING

1

TYPE NUMBER MARKING CODE

PBSS5350T ZD*

(1)

Top view

21

MAM256

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

* = W: Made in China.

ORDERING INFORMATION

PACKAGE

TYPENUMBER

NAME DESCRIPTION VERSION

PBSS5350T − plastic surface mounted package; 3 leads SOT23

2

2004 Jan 13 2

Philips Semiconductors Product specification

50 V, 3 A

PBSS5350T

PNP low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

C

I

CRP

I

CM

I

B

P

T
T
T

CBO
CEO
EBO

tot

stg
j
amb

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
collector current (DC) −−2A
repetitive peak collector current note 1 −−3A
peak collector current single peak −−5A
base current (DC) −−0.5 A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

CEsat

≤ 25 °C; note 2 − 300 mW

amb

T

≤ 25 °C; note 3 − 480 mW

amb

T

≤ 25 °C; note 4 − 540 mW

amb

T

≤ 25 °C; notes 1 and 2 − 1.2 W

amb

Notes

1. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤0.25.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th (j-a)

thermal resistance from junction to
ambient

in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

4. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤0.25.

2004 Jan 13 3

Philips Semiconductors Product specification

50 V, 3 A

PBSS5350T

PNP low V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

V

R
V

V
f

T

C

FE

CEsat

CEsat

BEsat

BEon

c

collector-base cut-off current VCB= −50 V; IE=0 −−−100 nA

emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −2 V; IC= −100 mA 200 −−

collector-emitter saturation
voltage

equivalent on-resistance IC= −2 A; IB= −200 mA; note 1 − 90 135 mΩ
base-emitter saturation

voltage
base-emitter turn-on voltage VCE= −2 V; IC= −1 A; note 1 −1.2 −−V

transition frequency IC= −100 mA; VCE= −5V;

collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−35 pF

(BISS) transistor

CEsat

= −50 V; IE= 0; Tj= 150 °C −−−50 µA

V

CB

VCE= −2 V; IC= −500 mA 200 −−
VCE= −2 V; IC= −1 A; note 1 200 −−
VCE= −2 V; IC= −2 A; note 1 130 −−
VCE= −2 V; IC= −3 A; note 1 80 −−
IC= −500 mA; IB= −50 mA −−−90 mV
IC= −1 A; IB= −50 mA −−−180 mV
IC= −2 A; IB= −100 mA; note 1 −−−320 mV
IC= −2 A; IB= −200 mA; note 1 −−−270 mV
IC= −3 A; IB= −300 mA; note 1 −−−390 mV

IC= −2 A; IB= −100 mA; note 1 −−−1.1 V
IC= −3 A; IB= −300 mA; note 1 −−−1.2 V

100 −−MHz

f = 100 MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2004 Jan 13 4

Philips Semiconductors Product specification

50 V, 3 A
PNP low V

1000

handbook, halfpage

h

FE

800

600

400

200

0

−1

−10

VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=25°C.
= −55 °C.

CEsat

−1

(BISS) transistor

MLD885

(1)

(2)

(3)

−10

−10

2

−10

3

IC (mA)

−10

PBSS5350T

−10

MLD886

3

IC (mA)

−10

4

−1200

handbook, halfpage

V

BE

(mV)

(1)

−800

(2)

(3)

−400

0

4

−10

−1

−1 −10

−10

2

VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

−10

MLD887

3

IC (mA)

−1300

handbook, halfpage

V

BEsat

(mV)

−900

−500

−100

−1

−10

IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

−1 −10

−10

(1)

(2)

(3)

2

−10

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

−10

MLD888

3

IC (mA)

−10

4

−1300

handbook, halfpage

V

BEsat

(mV)

−900

(1)

(2)

(3)

−500

4

−100

−10

−1

−1 −10

−10

2

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.4 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Jan 13 5

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

50 V, 3 A
PNP low V

3

−10

handbook, halfpage

V

CEsat

(mV)

2

−10

−10

−1

−1

−10

IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

CEsat

−1 −10

(BISS) transistor

MLD889

(1)

(3)

−10

(2)

2

−10

3

IC (mA)

−10

4

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

−10

−1

−1

−10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

−1 −10

PBSS5350T

MLD890

(1)

(2)

−10

(3)

2

−10

3

IC (mA)

−10

4

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

4

−10

handbook, halfpage

V

CEsat

(mV)

3

−10

2

−10

−10

−1

−−10

IC/IB= 50.
(1) T

amb

(2) T

amb

(3) T

amb

−1

= 150 °C.
=25°C.
= −55 °C.

−1

(2)

−10 −10

(1)

(3)

2

−10

3

IC (mA)

MLD891

−10

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

4

−10

handbook, halfpage

V

CEsat
(mV)

3

−10

2

−10

−10

4

−10

−1

−1 −10

−10

(1)

(3)

2

IC/IB= 100.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

MLD892

(2)

−10

3

IC (mA)

−10

4

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

2004 Jan 13 6

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

50 V, 3 A
PNP low V

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

−1

10

−2

10

−1

−10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

CEsat

−1 −10

(BISS) transistor

MLD893

(2)

−10

(1)

(3)

−10

3

IC (mA)

−10

4

2

PBSS5350T

Fig.10 Equivalent on-resistance as a function of

collector current; typical values.

2004 Jan 13 7

Philips Semiconductors Product specification

50 V, 3 A

PBSS5350T

PNP low V

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

(BISS) transistor

CEsat

D

E

H

E

AB

X

v

M

A

3

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

e

E

1.4

1.9

1.2

REFERENCES

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2004 Jan 13 8

Philips Semiconductors Product specification

50 V, 3 A

PBSS5350T

PNP low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For datasheets describingmultiple type numbers,the highest-level productstatus determines thedata sheetstatus.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Jan 13 9

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp10 Date of release:2004 Jan 13 Document order number: 9397 75012442

SCA76