Philips PBSS5350D, PBSS5350X Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

andbook, halfpage

M3D302

PBSS5350D

PNP transistor

Product specification			2000 Mar 08

Philips Semiconductors	Product specification
PNP transistor	PBSS5350D

FEATURES

∙High current capabilities

∙Low VCEsat.

APPLICATIONS

∙Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers

∙VCEsat critical applications such as the latest low supply voltage IC applications

∙All battery driven equipment to save battery power.

DESCRIPTION

PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D.

MARKING CODE

TYPE NUMBER		MARKING CODE
PBSS5350D		53
LIMITING VALUES

PINNING

PIN				DESCRIPTION
1	collector
2	collector
3	base
4	emitter
5	collector
6	collector
handbook, halfpage 6			5	4
				1, 2, 5, 6
				3
				4
1	2			3
Top view				MAM435

Fig.1 Simplified outline (SOT457) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−60	V
VCEO	collector-emitter voltage	open base	−	−50	V
VEBO	emitter-base voltage	open collector	−	−6	V
IC	collector current (DC)		−	−3	A
ICM	peak collector current		−	−5	A
IBM	peak base current		−	−1	A
Ptot	total power dissipation	Tamb ≤ 25 °C
		note 1	−	600	mW
		note 2	−	750	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	ambient temperature		−65	+150	°C

Notes

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

2.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

2000 Mar 08

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Philips Semiconductors			Product specification
PNP transistor			PBSS5350D
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to	in free air;
	ambient	note 1	208	K/W
		note 2	160	K/W

Notes

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

2.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −50 V	−	−100	nA
		IE = 0; VCB = −50 V; Tj = 150 °C	−	−50	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−100	nA
hFE	DC current gain	VCE = −2 V;
		IC = −500 mA	200	−
		IC = −1 A; note 1	200	−
		IC = −2 A; note 1	100	−
VCEsat	collector-emitter saturation voltage	IC = −500 mA; IB = −50 mA	−	−100	mV
		IC = −1 A; IB = −50 mA	−	−180	mV
		IC = −2 A; IB = −200 mA; note 1	−	−300	mV
VBEsat	base-emitter saturation voltage	IC = −2 A; IB = −200 mA; note 1	−	−1.2	V
VBEon	base-emitter turn-on voltage	IC = −1 A; VCE = −2 V; note 1	−	−1.1	V
Cc	collector capacitance	IE = Ie = 0; VCB = −10 V;	−	40	pF
		f = 1 MHz
fT	transition frequency	IC = −100 mA; VCE = −5 V;	100	−	MHz
		f = 100 MHz

Note

1. Pulse test tp ≤ 300 μs, δ ≤ 0.02.

2000 Mar 08

3