Philips PBSS5320X Technical data
PBSS5320X
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5320X
20 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification |
|
2004 Nov 04 |
|||||
Supersedes data of 2003 Nov 27 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
20 V, 3 A
PBSS5320X
PNP low VCEsat (BISS) transistor
FEATURES
∙SOT89 (SC-62) package
∙Low collector-emitter saturation voltage VCEsat
∙High collector current capability: IC and ICM
∙Higher efficiency leading to less heat generation
∙Reduced printed-circuit board requirements.
APPLICATIONS
∙Power management
–DC/DC converters
–Supply line switching
–Battery charger
–LCD backlighting.
∙Peripheral drivers
–Driver in low supply voltage applications (e.g. lamps and LEDs)
–Inductive load driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X.
MARKING
TYPE NUMBER |
MARKING CODE |
|
|
PBSS5320X |
S45 |
|
|
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
|
MAX. |
UNIT |
|
|
|
|
|
VCEO |
collector-emitter voltage |
|
−20 |
V |
IC |
collector current (DC) |
|
−3 |
A |
ICM |
peak collector current |
|
−5 |
A |
RCEsat |
equivalent on-resistance |
|
105 |
mΩ |
PINNING |
|
|
|
|
|
|
|
|
|
PIN |
DESCRIPTION |
|
|
|
|
|
|
|
|
1 |
emitter |
|
|
|
|
|
|
|
|
2 |
collector |
|
|
|
|
|
|
|
|
3 |
base |
|
|
|
|
|
|
|
|
2
3
1
sym079
3 2 1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
|
PACKAGE |
|
|
|
|
|
||
NAME |
DESCRIPTION |
VERSION |
||
|
||||
|
|
|
|
|
PBSS5320X |
SC-62 |
plastic surface mounted package; collector pad for good heat |
SOT89 |
|
|
|
transfer; 3 leads |
|
|
|
|
|
|
2004 Nov 04 |
2 |
Philips Semiconductors |
Product specification |
|
|
20 V, 3 A
PBSS5320X
PNP low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
VCBO |
collector-base voltage |
open emitter |
− |
−20 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
−20 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
collector current (DC) |
note 4 |
− |
−3 |
A |
ICM |
peak collector current |
limited by Tj(max) |
− |
−5 |
A |
IB |
base current (DC) |
|
− |
−0.5 |
A |
Ptot |
total power dissipation |
Tamb ≤ 25 °C |
|
|
|
|
|
note 1 |
− |
550 |
mW |
|
|
note 2 |
− |
1 |
W |
|
|
note 3 |
− |
1.4 |
W |
|
|
note 4 |
− |
1.6 |
W |
|
|
|
|
|
|
Tstg |
storage temperature |
|
−65 |
+150 |
°C |
Tj |
junction temperature |
|
− |
150 |
°C |
Tamb |
ambient temperature |
|
−65 |
+150 |
°C |
Notes
1.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4.Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 04 |
3 |
Philips Semiconductors |
Product specification |
|
|
20 V, 3 A
PBSS5320X
PNP low VCEsat (BISS) transistor
2 |
|
|
|
MLE372 |
|
|
|
|
|
handbook, halfpage |
|
|
|
|
Ptot |
|
|
|
|
(W) |
|
|
|
|
(1) |
|
|
|
|
1.6 |
|
|
|
|
(2) |
|
|
|
|
1.2 |
|
|
|
|
(3) |
|
|
|
|
0.8 |
|
|
|
|
(4) |
|
|
|
|
0.4 |
|
|
|
|
0 |
|
|
|
|
0 |
40 |
80 |
120 |
160 |
|
|
|
Tamb (°C) |
|
(1)Ceramic PCB; 7 cm2 mounting pad for collector.
(2)FR4 PCB; 6 cm2 copper mounting pad for collector.
(3)FR4 PCB; 1 cm2 copper mounting pad for collector.
(4)Standard footprint.
Fig.2 Power derating curves.
2004 Nov 04 |
4 |
Loading...