Philips PBSS5240V Technical data
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M3D744
PBSS5240V
40 V low V
Product specification 2003 Jan 30
CEsat
PNP transistor
Philips Semiconductors Product specification
40 V low V
CEsat
PNP transistor
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability IC and I
• High collector current gain (hFE) at high I
CEsat
CM
C
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.
• Peripheral driver:
– Driver in lowsupply voltage applications (e.g. lamps,
LEDs)
– Inductive load drivers (e.g. relay, buzzers and
motors).
PBSS5240V
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
handbook, halfpage
collector-emitter voltage −40 V
collector current (DC) −1.8 A
peak collector current −2A
equivalent on-resistance <250 mΩ
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
5
46
DESCRIPTION
PNP transistor providing low V
and high current
CEsat
capability in a SOT666 plastic package.
NPN complement: PBSS4240V.
MARKING
TYPE NUMBER MARKING CODE
PBSS5240V 52
1, 2, 5, 6
3
4
123
Top view
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
2003 Jan 30 2
Philips Semiconductors Product specification
40 V low V
PNP transistor
CEsat
PBSS5240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) note 1 −−1.8 A
peak repetitive collector current note 2 −−2A
peak collector current −−3A
base current (DC) −−300 mA
peak base current −−1A
total power dissipation T
≤ 25 °C; note 3 − 300 mW
amb
T
≤ 25 °C; note 4 − 500 mW
amb
T
≤ 25 °C; note 1 − 900 mW
amb
T
≤ 25 °C; notes 2 and 3 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 410 K/W
note 2 215 K/W
note 3 140 K/W
notes 1 and 4 110 K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.
2003 Jan 30 3
Philips Semiconductors Product specification
40 V low V
PNP transistor
CEsat
PBSS5240V
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB= −40 V; IE=0 −−−100 nA
V
= −40 V; IE= 0; T
CB
= 150 °C −−−50 µA
amb
collector-emitter cut-off current VCE= −30 V; IB=0 −−−100 nA
emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −5 V; IC= −1 mA 300 −−
= −5 V; IC= −100 mA 300 − 800
V
CE
V
= −5 V; IC= −500 mA 250 −−
CE
V
= −5 V; IC= −1 A 160 −−
CE
= −5 V; IC= −2 A; note 1 50 −−
V
CE
collector-emitter saturation voltage IC= −100 mA; IB= −1mA −−80 −120 mV
I
= −500 mA; IB= −50 mA −−100 −145 mV
C
= −1 A; IB= −100 mA; note 1 −−180 −250 mV
I
C
I
= −2 A; IB= −200 mA −−370 −530 mV
C
equivalent on-resistance IC= −1 A; IB= −100 mA; note 1 − 180 <250 mΩ
base-emitter saturation voltage IC= −1 A; IB= −100 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1V
transition frequency IC= −50 mA; VCE= −10 V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−12 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Jan 30 4
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