Philips PBSS5240T Technical data
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PBSS5240T
40 V, 2 A
PNP low V
Product specification
Supersedes data of 2001 Oct 31
CEsat
(BISS) transistor
2004 Jan 15
Philips Semiconductors Product specification
40 V, 2 A
PNP low V
CEsat
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistor.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavydutybatterypoweredequipment(motorandlamp
drivers).
DESCRIPTION
PNP low V
transistor in a SOT23 plastic package.
CEsat
NPN complement: PBSS4240T.
(BISS) transistor
PBSS5240T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
handbook, halfpage
collector-emitter voltage −40 V
collector current (DC) −2A
peak collector current −3A
equivalent on-resistance <220 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
3
3
MARKING
TYPE NUMBER MARKING CODE
(1)
21
1
2
PBSS5240T ZF*
Top view
MAM256
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
∗ = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS5240T − plastic surface mounted package; 3 leads SOT23
2004 Jan 15 2
Philips Semiconductors Product specification
40 V, 2 A
PBSS5240T
PNP low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−2A
peak collector current −−3A
peak base current −−300 mA
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
2004 Jan 15 3
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