Philips PBSS5240T Technical data
PBSS5240T
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5240T
40 V, 2 A
PNP low VCEsat (BISS) transistor
Product specification |
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2004 Jan 15 |
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Supersedes data of 2001 Oct 31 |
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Philips Semiconductors |
Product specification |
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40 V, 2 A
PBSS5240T
PNP low VCEsat (BISS) transistor
FEATURES
∙Low collector-emitter saturation voltage
∙High current capability
∙Improved device reliability due to reduced heat generation
∙Replacement for SOT89/SOT223 standard packaged transistor.
APPLICATIONS
∙Supply line switching circuits
∙Battery management applications
∙DC/DC converter applications
∙Strobe flash units
∙Heavy duty battery powered equipment (motor and lamp drivers).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T.
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PBSS5240T |
ZF* |
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Note
1.= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
−40 |
V |
IC |
collector current (DC) |
−2 |
A |
ICM |
peak collector current |
−3 |
A |
RCEsat |
equivalent on-resistance |
<220 |
mΩ |
PINNING
PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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handbook, halfpage |
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Top view |
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MAM256 |
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Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PBSS5240T |
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plastic surface mounted package; 3 leads |
SOT23 |
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2004 Jan 15 |
2 |
Philips Semiconductors |
Product specification |
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40 V, 2 A
PBSS5240T
PNP low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
−40 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
−40 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
collector current (DC) |
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− |
−2 |
A |
ICM |
peak collector current |
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− |
−3 |
A |
IBM |
peak base current |
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− |
−300 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
300 |
mW |
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Tamb ≤ 25 °C; note 2 |
− |
480 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Notes
1.Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2.Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth(j-a) |
thermal resistance from junction to ambient |
in free air; note 1 |
417 |
K/W |
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in free air; note 2 |
260 |
K/W |
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Notes
1.Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2.Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
2004 Jan 15 |
3 |
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