Philips PBSS5240T Technical data

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DATA SH EET

PBSS5240T

40 V, 2 A
PNP low V

Product specification
Supersedes data of 2001 Oct 31

CEsat

(BISS) transistor

2004 Jan 15

Philips Semiconductors Product specification

40 V, 2 A
PNP low V

CEsat

FEATURES

• Low collector-emitter saturation voltage

• High current capability

• Improved device reliability due to reduced heat

generation

• Replacement for SOT89/SOT223 standard packaged
transistor.

APPLICATIONS

• Supply line switching circuits

• Battery management applications

• DC/DC converter applications

• Strobe flash units

• Heavydutybatterypoweredequipment(motorandlamp

drivers).

DESCRIPTION

PNP low V

transistor in a SOT23 plastic package.

CEsat

NPN complement: PBSS4240T.

(BISS) transistor

PBSS5240T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

handbook, halfpage

collector-emitter voltage −40 V
collector current (DC) −2A
peak collector current −3A
equivalent on-resistance <220 mΩ

PIN DESCRIPTION

1 base
2 emitter
3 collector

3

3

MARKING

TYPE NUMBER MARKING CODE

(1)

21

1

2

PBSS5240T ZF*

Top view

MAM256

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

∗ = W: Made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS5240T − plastic surface mounted package; 3 leads SOT23

2004 Jan 15 2

Philips Semiconductors Product specification

40 V, 2 A

PBSS5240T

PNP low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

Notes

1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.

2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.

collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−2A
peak collector current −−3A
peak base current −−300 mA
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

CEsat

≤ 25 °C; note 1 − 300 mW

amb

T

≤ 25 °C; note 2 − 480 mW

amb

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air; note 1 417 K/W

in free air; note 2 260 K/W

Notes

1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.

2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.

2004 Jan 15 3

Philips Semiconductors Product specification

40 V, 2 A

PBSS5240T

PNP low V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

BEO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BE(on)

f

T

C

c

collector-base cut-off current VCB= −30 V; IE=0 −−−100 nA

emitter-base cut-off current VEB= −4 V; IC=0 −−−100 nA
DC current gain VCE= −2V

collector-emitter saturation voltage IC= −100 mA; IB= −1mA −−55 −100 mV

equivalent on-resistance IC= −500 mA; IB= −50 mA;

base-emitter saturation voltage IC= −2 A; IB= −200 mA −−−1.1 V
base-emitter turn-on voltage VCE= −2 V; IC= −100 mA −−−0.75 V
transition frequency IC= −100 mA; VCE= −10 V;

collector capacitance VCB= −10 V; IE=Ie=0;

(BISS) transistor

CEsat

= −30 V; IE= 0; Tj= 150 °C −−−50 µA

V

CB

IC= −100 mA 300 450 −
IC= −500 mA 260 350 −
IC= −1 A 210 290 −
IC= −2 A 100 180 −

IC= −500 mA; IB= −50 mA −−70 −110 mV
IC= −750 mA; IB= −15 mA −−140 −225 mV
IC= −1 A; IB= −50 mA −−140 −225 mV
IC= −2 A; IB= −200 mA −−240 −350 mV

− 160 <220 mΩ

note 1

100 200 − MHz

f = 100 MHz

− 23 28 pF

f = 1 MHz

Note

1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.

2004 Jan 15 4

Philips Semiconductors Product specification

40 V, 2 A
PNP low V

1000

handbook, halfpage

h

FE

800

600

400

200

0

−1

−10

VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

CEsat

(1)

(2)

(3)

−1 −10

(BISS) transistor

MHC064

−10

2

−10

3

IC (mA)

−10

4

−1200

handbook, halfpage

V

BE

(mV)

−1000

−800

−600

−400

−200

0

−1

−10

VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

PBSS5240T

MHC067

(1)

(2)

(3)

−1

−10

−10

2

−10

3

IC (mA)

−10

4

Fig.2 DC current gain as a function of collector

current; typical values.

−10

MHC066

3

IC (mA)

−1200

handbook, halfpage

V

BEsat

(V)

−1000

−800

−600

−400

−200

−1

−10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

(1)

(2)

(3)

−1

−10

−10

2

−10

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

−10

MHC068

3

IC (mA)

−10

4

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

(1)
(2)
(3)

−10

−1

4

−10

−1

−1 −10 −10

2

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Jan 15 5

Fig.5 Collector-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

40 V, 2 A
PNP low V

−3000

handbook, halfpage

I

C

(mA)

−2000

−1000

0

0

(1) IB= −23.0 mA.
(2) IB= −20.7 mA.
(3) IB= −18.4 mA.
(4) IB= −16.1 mA.

(BISS) transistor

CEsat

(1)
(2)
(3)
(4)

−1 −5−2 −3

(5) I

= −13.8 mA.

B

(6) IB= −11.5 mA.
(7) IB= −9.2 mA.

(5)
(6)

(7)
(8)

(9)

(10)

−4

(8) I
(9) IB= −4.6 mA.
(10) IB= −2.3 mA.

MHC065

VCE (V)

= −6.9 mA.

B

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

−1

10

−1

−10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

−1 −10

PBSS5240T

(1)
(2)
(3)

−10

2

−10

3

IC (mA)

MHC069

−10

4

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

Fig.7 Equivalent on-resistance as a function of

collector current; typical values.

2004 Jan 15 6

Philips Semiconductors Product specification

40 V, 2 A

PBSS5240T

PNP low V

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

(BISS) transistor

CEsat

D

E

H

E

AB

X

v

M

A

3

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

E

1.4

1.9

1.2

REFERENCES

e

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2004 Jan 15 7

Philips Semiconductors Product specification

40 V, 2 A

PBSS5240T

PNP low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditionsabovethosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Jan 15 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp9 Date of release: 2004 Jan 15 Document order number: 9397750 12439

SCA76