Philips PBSS5160T Technical data

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DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

PBSS5160T

60 V, 1 A
PNP low V

CEsat

M3D088

(BISS) transistor

Product specification
Supersedes data of 2003 Jun 23

2004 May 27

Philips Semiconductors Product specification

60 V, 1 A
PNP low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability: IC and I

• High efficiency, reduces heat generation

• Reduces printed-circuit board area required

• Cost effective replacement for medium power

transistors BCP52 and BCX52.

APPLICATIONS

• Major application segments:
– Automotive
– Telecom infrastructure
– Industrial.

• Power management:
– DC-to-DC conversion
– Supply line switching.

• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

PNP low V

transistor in a SOT23 plastic package.

CEsat

NPN complement: PBSS4160T.

(BISS) transistor

CEsat

CM

PBSS5160T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

1 base
2 emitter
3 collector

handbook, halfpage

collector-emitter voltage −60 V
collector current (DC) −1A
peak collector current −2A
equivalent on-resistance 330 mΩ

PIN DESCRIPTION

Top view

3

1

21

MAM256

3

2

Fig.1 Simplified outline (SOT23) and symbol.

MARKING

TYPE NUMBER MARKING CODE

(1)

PBSS5160T U6*

Note

1. * = p: made in Hong Kong

* = t: made in Malaysia
* = W: made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS5160T − plastic surface mounted package; 3 leads SOT23

2004 May 27 2

Philips Semiconductors Product specification

60 V, 1 A

PBSS5160T

PNP low V

CEsat

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

I
I
I
P

T
T
T

CBO
CEO
EBO

C

CM
B
BM

tot

stg
j
amb

collector-base voltage open emitter −−80 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) note 1 −−0.9 A

peak collector current t = 1 ms or limited by T
base current (DC) −−300 mA
peak base current tp≤ 300 µs; δ≤0.02 −−1A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

note 2 −−1A

−−2A

amb

j(max)

≤ 25 °C;
note 1 − 270 mW
note 2 − 400 mW
notes 1 and 3 − 1.25 W

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ≤20 %, pulse width tp≤ 10 ms.

120

T

amb

MLE128

(°C)

500

handbook, halfpage

P

tot

(mW)

400

300

200

100

0

0 40 80 160

(1)

(2)

(1) Device mounted with 1 cm2 collector tab.
(2) Device mounted on standard footprint.

Fig.2 Power derating curves.

2004 May 27 3