Philips PBSS5160DS Technical data

PBSS5160DS

PBSS5160DS

60 V, 1 A PNP low VCEsat (BISS) transistor

Rev. 02 — 28 June 2005	Product data sheet

1.Product profile

1.1General description

PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS.

1.2Features

■Low collector-emitter saturation voltage VCEsat

■High collector current capability: IC and ICM

■High collector current gain (hFE) at high IC

■High efficiency due to less heat generation

■Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3Applications

■Dual low power switches (e.g. motors, fans)

■Automotive applications

1.4Quick reference data

Table 1:	Quick reference data
Symbol	Parameter	Conditions		Min	Typ	Max	Unit
VCEO	collector-emitter voltage	open base		-	-	−60	V
IC	collector current (DC)		[1]	-	-	−1	A
ICM	peak collector current	single pulse;		-	-	−2	A
		tp ≤ 1 ms
RCEsat	collector-emitter saturation	IC = −1 A;	[2]	-	250	330	mΩ
	resistance	IB = −100 mA

[1]Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2]Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Philips Semiconductors			PBSS5160DS
			60 V, 1 A PNP low VCEsat (BISS) transistor

2. Pinning information

	Table 2:	Pinning
	Pin	Description	Simplified outline					Symbol
	1	emitter TR1
			6		5	4		6	5			4
	2	base TR1
	3	collector TR2						TR1				TR2
	4	emitter TR2	1		2	3
	5	base TR2
								1	2			3
	6	collector TR1
									sym018

3. Ordering information

Table 3: Ordering information

Type number	Package
	Name	Description	Version
PBSS5160DS	SC-74	plastic surface mounted package; 6 leads	SOT457

4. Marking

Table 4: Marking codes

Type number	Marking code
PBSS5160DS	A5

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions			Min	Max	Unit
Per transistor
VCBO	collector-base voltage	open emitter			-	−80	V
VCEO	collector-emitter	open base			-	−60	V
	voltage
VEBO	emitter-base voltage	open collector			-	−5	V
IC	collector current (DC)	[1]			-	−0.77	A
		[2]			-	−0.9	A
		[3]			-	−1	A
ICM	peak collector current	single pulse; tp ≤ 1 ms			-	−2	A
IB	base current (DC)				-	−300	mA
IBM	peak base current	single pulse; tp ≤ 1 ms			-	−1	A

9397 750 15186

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 28 June 2005

2 of 14

Philips Semiconductors

PBSS5160DS

60 V, 1 A PNP low VCEsat (BISS) transistor

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

P

tot

total power dissipation

T

≤ 25 °C

[1]

-

290

mW

amb

[2]

-

370

mW

[3]

-

450

mW

Per device

P

tot

total power dissipation

T

≤ 25 °C

[1]

-

420

mW

amb

[2]

-

560

mW

[3]

-

700

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]Device mounted on a ceramic PCB, Al2O3, standard footprint.

0.8				006aaa493
Ptot	(1)
(W)
0.6	(2)
	(3)
0.4
0.2
0
0	40	80	120	160
			Tamb (°C)

(1)Ceramic PCB, Al2O3, standard footprint

(2)FR4 PCB, mounting pad for collector 1 cm2

(3)FR4 PCB, standard footprint

Fig 1. Power derating curves

9397 750 15186

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 28 June 2005

3 of 14

Philips Semiconductors			PBSS5160DS
			60 V, 1 A PNP low VCEsat (BISS) transistor

6. Thermal characteristics

Table 6:	Thermal characteristics
Symbol	Parameter	Conditions			Min	Typ	Max	Unit
Per transistor
Rth(j-a)	thermal resistance from	in free air		[1]	-	-	431	K/W
	junction to ambient
				[2]	-	-	338	K/W
				[3]	-	-	278	K/W
Rth(j-sp)	thermal resistance from				-	-	105	K/W
	junction to solder point
Per device
Rth(j-a)	thermal resistance from	in free air		[1]	-	-	298	K/W
	junction to ambient
				[2]	-	-	223	K/W
				[3]	-	-	179	K/W

[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]Device mounted on a ceramic PCB, Al2O3, standard footprint.

103									006aaa494
Zth(j-a)	δ = 1
		0.75
(K/W)
	0.50
102		0.33
	0.20
	0.10
	0.05
10	0.02
	0.01
	0
1		10−4	10−3	10−2	10−1			102	103
10−5						1	10
									tp (s)

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

9397 750 15186

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 28 June 2005

4 of 14

Philips Semiconductors			PBSS5160DS
			60 V, 1 A PNP low VCEsat (BISS) transistor

103									006aaa495
Zth(j-a)	δ = 1
(K/W)		0.75
102	0.50
	0.20	0.33
	0.10
	0.05
10	0.02
	0.01
	0
1		10−4	10−3	10−2	10−1			102	103
10−5						1	10
									tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
103									006aaa496
Zth(j-a)	δ = 1
(K/W)
		0.75
102	0.50
		0.33
	0.20
	0.10
	0.05
10	0.02
	0.01
	0
1		10−4	10−3	10−2	10−1			102	103
10−5						1	10
									tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

9397 750 15186

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 28 June 2005

5 of 14