Philips PBSS5140V Technical data

PBSS5140V

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D744

PBSS5140V

40 V low VCEsat PNP transistor

Product specification			2002 Mar 20
Supersedes data of 2001 Oct 19

Philips Semiconductors	Product specification
40 V low VCEsat PNP transistor	PBSS5140V

FEATURES

∙300 mW total power dissipation

∙Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package

∙Improved thermal behaviour due to flat leads

∙Self alignment during soldering due to straight leads

∙Low collector-emitter saturation voltage

∙High current capability

APPLICATIONS

∙General purpose switching and muting

∙LCD back lighting

∙Supply line switching circuits

∙Battery driven equipment (mobile phones, video cameras and hand-held devices).

DESCRIPTION

PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.

MARKING

TYPE NUMBER	MARKING CODE
PBSS5140V	25

QUICK REFERENCE DATA

SYMBOL	PARAMETER	MAX.	UNIT
VCEO	collector-emitter voltage	−40	V
IC	collector current (DC)	−1	A
ICM	peak collector current	−2	A
RCEsat	equivalent on-resistance	<340	mΩ

PINNING

PIN	DESCRIPTION
1	collector
2	collector
3	base
4	emitter
5	collector
6	collector

handbook, halfpage 6		5		4

1, 2, 5, 6

3

4

1

2

3

Top view

MAM446

Fig.1 Simplified outline (SOT666) and symbol.

2002 Mar 20

2

Philips Semiconductors				Product specification
40 V low VCEsat PNP transistor				PBSS5140V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
VCBO	collector-base voltage	open emitter	−		−40	V
VCEO	collector-emitter voltage	open base	−		−40	V
VEBO	emitter-base voltage	open collector	−		−5	V
IC	collector current (DC)		−		−1	A
ICM	peak collector current		−		−2	A
IB	base current (DC)		−		−300	mA
IBM	peak base current		−		−1	A
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−		300	mW
		Tamb ≤ 25 °C; note 2	−		500	mW
Tstg	storage temperature		−65		+150	°C
Tj	junction temperature		−		150	°C
Tamb	operating ambient temperature		−65		+150	°C

Notes

1.Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.

2.Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1		410	K/W
		note 2		215	K/W

Notes

1.Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.

2.Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.

Soldering

The only recommended soldering is reflow soldering.

2002 Mar 20

3