Philips pbss5140t DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PBSS5140T
PNP BISS transistor
Product specification 2000 Nov 16
Philips Semiconductors Product specification
PNP BISS transistor PBSS5140T
FEATURES
• High current (max. 1 A)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Batterypoweredunitswherehighcurrentandlowpower
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough in Small Signal) transistor in a
SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
PBSS5140T p2H
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−1A
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
≤ 25 °C; note 2 − 450 mW
T
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
2000 Nov 16 2
Philips Semiconductors Product specification
PNP BISS transistor PBSS5140T
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CEO
I
BEO
h
FE
V
CEsat
V
BEsat
V
BEon
C
c
f
T
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 278 K/W
collector-base cut-off current VCB= −40 V; IE=0 −−100 nA
V
= −40 V; IE= 0; Tj= 150 °C −−50 µA
CB
collector-emitter cut-off current VCE= −30 V; IB=0 −−100 nA
emitter-base cut-off current VEB= −5 V; IC=0 −−100 nA
DC current gain VCE= −5 V; note 1
I
= −1 mA 300 −
C
I
= −100 mA 300 800
C
I
= −500 mA 250 −
C
I
= −1 A 160 −
C
collector-emitter saturation voltage IC= −100 mA; IB= −1mA −−200 mV
I
= −500 mA; IB= −50 mA −−250 mV
C
I
= −1 A; IB= −100 mA −−500 mV
C
base-emitter saturation voltage IC= −1 A; IB= −50 mA −−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−1V
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz − 12 pF
transition frequency IC= −50 mA; VCE= −10 V;
150 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2000 Nov 16 3
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