Philips PBSS5140D Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

alfpage

M3D302

PBSS5140D

40 V low V

Product specification 2001 Nov 15

CEsat

PNP transistor

Philips Semiconductors Product specification

40 V low V

CEsat

PNP transistor

FEATURES

• Low collector-emitter saturation voltage

• High current capability

• Improved device reliability due to reduced heat

generation.

APPLICATIONS

• General purpose switching and muting

• LCD back-lighting

• Supply line switching circuits

• Battery driven equipment (mobile phones, video

cameras and hand-held devices).

DESCRIPTION

PNP low V

transistor in an SC-74 (SOT457) plastic

CEsat

package.

PBSS5140D

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

collector-emitter voltage −40 V
collector current (DC) −1A
peak collector current −2A
equivalent on-resistance <500 mΩ

PIN DESCRIPTION

1 collector
2 collector
3 base
4 n.c.
5 collector
6 emitter

MARKING

TYPE NUMBER MARKING CODE

PBSS5140D 51

handbook, halfpage

56

132

Top view

4

1, 2, 5

3

6

MAM458

Fig.1 Simplified outline (SC-74; SOT457) and

symbol.

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−1A
total power dissipation T

≤ 25 °C; note 1 − 460 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.

2001 Nov 15 2

Philips Semiconductors Product specification

40 V low V

PNP transistor

CEsat

PBSS5140D

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air; note 1 272 K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

f

T

collector-base cut-off current VCB= −40 V; IC=0 −−−100 nA

V

= −40 V; IC= 0; Tj= 150 °C −−−50 µA

CB

collector-emitter cut-off current VCE= −30 V; IB=0 −−−100 nA
emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −5V

I

=−1 mA 300 −−

C

I

=−100 mA 300 − 800

C

I

= −500 mA 250 −−

C

I

=−1 A 160 −−

C

collector-emitter saturation
voltage

IC= −100 mA; IB= −1mA −−−200 mV
I

= −500 mA; IB= −50 mA −−−250 mV

C

I

= −1 A; IB= −100 mA −−−500 mV

C

equivalent on-resistance IC= −500 mA; IB= −50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn on voltage VCE= −5 V; IC= −1A −−−1V
transition frequency IC= −50 mA; VCE= −10 V;

150 −−MHz

f = 100 MHz

C

c

collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−−12 pF

2

.

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2001 Nov 15 3